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Philips |
PHP7NQ60E ria l Product availability: Philips Semiconductors PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Symbol VDS ID Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain cur |
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Philips Semiconductors |
PHP45N03LT • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance SYMBOL g d s QUICK REFERENCE DATA VDSS = 30 V ID = 45 A RDS(ON) ≤ 24 mΩ (VGS = 5 V |
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Philips |
N-Channel MOSFET ria l Product availability: Philips Semiconductors PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Symbol VDS ID Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain cur |
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Philips |
PowerMOS transistors • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL |
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Philips |
PowerMOS transistor factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Tj, Tstg Operating junction and storage temperature range Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj |
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Philips |
Logic Level FET s Low on-state resistance s Fast switching. 3. Applications s Computer motherboard high frequency DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol Simplified outline mb mb mb Pin Des |
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