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Philips |
SMPS Control IC 2.1 Distinctive features I Universal mai |
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Philips |
PNP Transistor |
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Philips |
PNP Transistor |
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Philips |
PNP Transistor |
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Philips |
Low power quad op amps In the linear mode, the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. The unity gain crossover frequency and the input bias current are t |
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Philips Semiconductors |
(MPSA63 / MPSA64) Small-signal Transistors MPL. PAGE 255 830 830 220 typ. BC517 MPSA13 MPSA14 5000 10000 1997 Jul 21 16 This datasheet has been downloaded from http://www.digchip.com at this page |
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Philips |
NPN High Voltage Transistor |
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Philips |
NPN High Voltage Transistor |
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Philips |
Silicon Planar Epitaxial Transistor |
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Philips |
Silicon Planar Epitaxial Transistor |
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Philips |
Dual-band / CDMA/AMPS downconverter IC – PCS: – CDMA: – FM: • PCS and cellular downconverter mixers typical performance: Gain=11.3dB, NF=8.3dB, IIP3= +1.4dBm Gain=10.7dB, NF=9.6dB, IIP3= +6.3dBm Gain= 7.2dB, NF=10.2dB, IIP3= +5.9dBm • Separate, selectable IF outputs to suit FM and CDMA |
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Philips |
Dual-band / CDMA/AMPS downconverter IC – PCS: – CDMA: – FM: • PCS and cellular downconverter mixers typical performance: Gain=11.1dB, NF=8.4dB, IIP3= +1.8dBm Gain=11.3dB, NF=9.4dB, IIP3= +5.7dBm Gain= 7.5dB, NF=10.5dB, IIP3= +6.2dBm • Separate, selectable IF outputs to suit FM and CDMA |
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Philips |
Dual-band / CDMA/AMPS LNA and downconverter mixers Versatile step gain LNA • Low standby current in sleep mode: <50 µA • BCC32++™ package APPLICATIONS • Can meet single tone CDMA desensitization requirements • Can meet CDMA two tone interference requirements • Cellular PARAMETER Gain (dB) Noise fig |
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Philips |
Dual-band / PCSCDMA/AMPS LNA and downconverter mixers LNA typical performance PARAMETER Gain (dB) Noise figure (dB) Input IP3 (dBm) Current (mA) Cellular LNA 16.5 1.6 –2 4.9 PCS (CDMA) LNA 14.8 2 1 4.9 • Separate, selectable IF outputs to suit FM and CDMA bandwidths • Buffered Cellular and PCS LO input |
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PHILIPS |
PNP high-voltage transistor • Low current (max. 500 mA) • High voltage (max. 300 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA42. PINNING PIN 1 2 3 collector base e |
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Philips |
NPN Darlington transistor • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High gain amplification. handbook, halfpage MPSA14 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 1 DESCRIPTION NPN Darlington tran |
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Philips |
NPN high-voltage transistors • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Video • Telephony • Professional communication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92. Fig.1 1 handbook, hal |
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Philips |
Silicon Planar Epitaxial Transistor |
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Philips |
90W Resonant SMPS ..................................................................................................................................................... 7 QUICK REFERENCE DATA ............................................................................. |
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Philips |
SMPS Battery Charger Controller |
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