| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Philips |
NPN 9 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital |
|
|
|
|
Philips |
NPN 5GHz Widebane Transistor |
|
|
|
|
Philips |
NPN 9 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital |
|
|
|
|
Philips |
NPN 5 GHz wideband transistor • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING |
|
|
|
|
Philips |
NPN 25 GHz wideband transistor s Very high power gain s Low noise figure s High transition frequency s Emitter is thermal lead s Low feedback capacitance 1.3 Applications s Radio Frequency (RF) front end wideband applications such as: x analog and digital cellular telephones x cor |
|
|
|
|
Philips |
NPN 5 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS • MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range • Ideally suitable for use in class- |
|
|
|
|
Philips |
NPN 5 GHz wideband transistor • High power gain • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT143B plastic package. PINNING |
|