| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Silicon NPN epitaxial planar type • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead (0.20) 5˚ • UNR1213 × 2 ■ Absolute Maxim |
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Panasonic Semiconductor |
Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type 1.60±0.05 Publication date: June 2003 SJJ00268BED 1 UP04315 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitt |
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Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor Publication date: December 2003 SJJ00240BED 1 UP04314 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector- |
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