No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Direct Joint Type range Clear − − IO Typ 5.0 1.5 2.1 mcd Min 1.5 0.5 2.8 mcd IF 20 20 20 mA Typ 2.2 2.1 1.5 V VF Max 2.8 2.8 0.5 V λP Typ 565 630 610 nm ∆λ Typ 30 40 40 nm IR IF 20 20 20 mA Max 10 10 10 µA VR 4 3 3 V IO IF 30 10 100 50 U IF VF Reletive Luminous |
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Panasonic Semiconductor |
4.8 mm GaAsP IO Ta Luminous Intensity Forward Current 30 LN G8 B4 LP LN D G4 B4 NP Y LN 100 50 30 10 5 3 Y NP B4 4 G LN G 8B 4L PD 100 50 30 LNG8B4LPD LNG4 B4NP Y 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 |
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Panasonic Semiconductor |
5.0 mm InGaAIP IO Ta Luminous Intensity Forward Current 300 30 LNG41LCF4 100 50 30 LNG81LCF8 LNG41LCF4 100 50 30 LNG81LCF8 10 5 3 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage |
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Panasonic Semiconductor |
3.0 mm InGaAIP s Intensity 500 300 IO Ta Luminous Intensity Forward Current 300 LNG497CK4 100 50 30 LNG897CK8 30 LNG497CK4 LNG897CK8 10 5 3 100 50 30 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current |
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Panasonic Semiconductor |
Two Color Lighting uminous Intensity 500 300 IO Ta Luminous Intensity Forward Current 30 30 ge an Or 3 Gr ee n 5 Or an ge 5 3 Gr een 10 10 100 50 30 1 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 1.5 60 80 100 Forward Cu |
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Panasonic Semiconductor |
Directly Joint Type Intensity 500 300 IO Ta Luminous Intensity Forward Current 50 30 LNG301MPU 10 5 3 LNG801LPDP2U 30 LNG801LPDP2U LNG801LPDP2U LNG801LPDP2U 100 LNG301MPU 50 30 LNG301MPU 10 5 3 LNG301MPU 1 1 3 5 10 30 50 100 300 1 1.6 1.8 2.0 2.2 |
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Panasonic Semiconductor |
Round Type 8 ± 0.2 2.4 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 40° 50° 60° 70° 80° 500 550 600 650 90° 100 80 60 40 20 IF Ta 50 Di |
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Panasonic Semiconductor |
5.0 mm InGaAIP 500 300 IO Ta Luminous Intensity Forward Current 300 LNG401CF4 100 50 30 LNG801CF8 30 LNG401CF4 100 50 30 LNG801CF8 10 5 3 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 0 −20 0 20 40 60 80 100 Forward Current Forward Vol |
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Panasonic Semiconductor |
5.0 mm InGaAIP IO Ta Luminous Intensity Forward Current 300 30 LNG41LCF4 100 50 30 LNG81LCF8 LNG41LCF4 100 50 30 LNG81LCF8 10 5 3 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage |
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Panasonic Semiconductor |
5.0 mm InGaAIP LNG492CF4 LNG892CF8 LNG892CF8 10 5 3 100 50 30 100 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current LNG492CF4 Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Chara |
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Panasonic Semiconductor |
5.0 mm Pure Green 0 1 2.0 3.0 4.0 5.0 6.0 10 0 20 40 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 300 40° 50° 60° 70° 80° 400 500 600 |
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Panasonic Semiconductor |
5.0 mm Pure Green 00 1 2.0 3.0 4.0 5.0 6.0 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 300 40° 50° 60° 70° 80° 400 50 |
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Panasonic Semiconductor |
Direct Joint Type range Clear − − IO Typ 5.0 1.5 2.1 mcd Min 1.5 0.5 2.8 mcd IF 20 20 20 mA Typ 2.2 2.1 1.5 V VF Max 2.8 2.8 0.5 V λP Typ 565 630 610 nm ∆λ Typ 30 40 40 nm IR IF 20 20 20 mA Max 10 10 10 µA VR 4 3 3 V IO IF 30 10 100 50 U IF VF Reletive Luminous |
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Panasonic Semiconductor |
3.0 mm InGaAIP tive Luminous Intensity 500 300 IO Ta Luminous Intensity Forward Current 300 LNG498CK4 100 50 30 LNG898CK8 30 LNG498CK4 LNG898CK8 10 5 3 100 50 30 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 For |
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Panasonic Semiconductor |
4.8 mm GaAsP IO Ta Luminous Intensity Forward Current 30 LN G8 B4 LP LN D G4 B4 NP Y LN 100 50 30 10 5 3 Y NP B4 4 G LN G 8B 4L PD 100 50 30 LNG8B4LPD LNG4 B4NP Y 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 |
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Panasonic Semiconductor |
5.0 mm Blue Series 5.0 6.0 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 300 40° 50° 60° 70° 80° 400 500 600 90° 100 80 60 40 |
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Panasonic Semiconductor |
3.0 mm InGaAIP s Intensity 500 300 IO Ta Luminous Intensity Forward Current 300 LNG497CK4 100 50 30 LNG897CK8 30 LNG497CK4 LNG897CK8 10 5 3 100 50 30 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current |
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Panasonic Semiconductor |
3.0 mm InGaAIP tive Luminous Intensity 500 300 IO Ta Luminous Intensity Forward Current 300 LNG498CK4 100 50 30 LNG898CK8 30 LNG498CK4 LNG898CK8 10 5 3 100 50 30 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 For |
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Panasonic Semiconductor |
5.0 mm InGaAIP 500 300 IO Ta Luminous Intensity Forward Current 300 LNG401CF4 100 50 30 LNG801CF8 30 LNG401CF4 100 50 30 LNG801CF8 10 5 3 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 0 −20 0 20 40 60 80 100 Forward Current Forward Vol |
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Panasonic Semiconductor |
Directly Joint Type Intensity 500 300 IO Ta Luminous Intensity Forward Current 50 30 LNG301MPU 10 5 3 LNG801LPDP2U 30 LNG801LPDP2U LNG801LPDP2U LNG801LPDP2U 100 LNG301MPU 50 30 LNG301MPU 10 5 3 LNG301MPU 1 1 3 5 10 30 50 100 300 1 1.6 1.8 2.0 2.2 |
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