Panasonic Semiconductor B11 fiche technique

No.	Partie #	Fabricant	Description
1	B1148	Panasonic Semiconductor	2SB1148 q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Par
2	B1108	Panasonic Semiconductor	2SB1108
3	2SB1148	Panasonic Semiconductor	PNP Transistor q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20
4	2SB1148A	Panasonic Semiconductor	PNP Transistor q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20
5	2SB1172A	Panasonic Semiconductor	PNP Transistor • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equi
6	2SB1176	Panasonic Semiconductor	PNP Transistor • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of smal
7	2SB1154	Panasonic Semiconductor	PNP Transistor q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction t
8	2SB1155	Panasonic Semiconductor	PNP Transistor q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction t
9	2SB1156	Panasonic Semiconductor	PNP Transistor q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction t
10	2SB1172	Panasonic Semiconductor	PNP Transistor • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equi
11	2SB1108	Panasonic Semiconductor	PNP Transistor