| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-dri |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2632, which is opti- mum for the pre-dr |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitt |
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Panasonic Semiconductor |
Silicon PNP Transistor q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-dr |
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Panasonic Semiconductor |
PNP Transistor |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-dri |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor 0.45 –0.1 +0.2 V mA mA W ˚C ˚C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC –51 TO –92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Col |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitt |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO –92 EIAJ:SC –43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitt |
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Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor 0.45 –0.1 +0.2 V mA mA W ˚C ˚C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC –51 TO –92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Col |
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