| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
P-Channel MOSFET 1 Silicon MOS FETs (Small Signal) PD Ta 200 –120 2SJ0536 ID VDS 60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS= –5V 50 Allowable power dissipation PD (mW) 160 –100 Drain current ID (mA) –80 VGS= –5.5V –60 –5.0V –4.5V – |
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Panasonic Semiconductor |
P-Channel MOSFET 2.9 –0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperatur |
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Panasonic Semiconductor |
P-Channel MOSFET q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Sy |
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Panasonic Semiconductor |
P-Channel MOSFET 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25°C) 0.2 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID |
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