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Panasonic Semiconductor |
2SD2715 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) |
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Panasonic Semiconductor |
2SD2137 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter C |
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Panasonic Semiconductor |
2SD1276 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage www.DataSh |
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Panasonic Semiconductor |
2SD1266A • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO |
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Panasonic Semiconductor |
2SD1273 q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V 7.5 |
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Panasonic Semiconductor |
2SD2136 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
Silicon NPN triple diffusion planer type Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0 |
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Panasonic Semiconductor |
2SD2375 q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 60 6 6 3 1 25 2 150 –55 to +150 Unit V V V A |
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Panasonic Semiconductor |
2SD2052 q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier q Full-pack package which can be ins |
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Panasonic Semiconductor |
Silicon NPN triple diffusion Transistor q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 7 12 8 45 1.3 150 –55 to |
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Panasonic Semiconductor |
2SD2544 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 60 60 7 8 4 15 2 150 –55 to +150 Unit |
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Panasonic Semiconductor |
2SD1450 q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25˚C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC T |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 80 6 5 3 20 2 |
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Panasonic Semiconductor |
2SD1266 q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Paramet |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 100 100 5 8 |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base vo |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation |
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