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Panasonic |
2SC5885 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode I Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 |
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Panasonic |
2SC829 q Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Jun |
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Panasonic |
Ceramic Disc Capacitors q Related by IEC60384-14 2nd Ed. and approved by European Safety Regulations (Types TS and NSÐA) q Reinforced Body Insulation /0.4mm min. approved by BSI, VDE (Type NS-A) q Flame-retardant insulating coating applied q Easy mounting through kinked Lea |
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Panasonic |
2SC5909 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic |
2SC4767 q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector |
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Panasonic |
2SC1846 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Output of 3 W can be obtained by a complementary pair with 2SA0885 • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolut |
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Panasonic Semiconductor |
2SC4212 I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with on |
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Panasonic |
2SC5914 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C Parameter Symbo |
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Panasonic |
2SC3507 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with |
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Panasonic |
2SC5407 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic |
Schottky Barrier Diodes q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 |
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Panasonic |
Ceramic Disc Capacitors q Related by IEC60384-14 2nd Ed. and approved by European Safety Regulations (Types TS and NSÐA) q Reinforced Body Insulation /0.4mm min. approved by BSI, VDE (Type NS-A) q Flame-retardant insulating coating applied q Easy mounting through kinked Lea |
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Panasonic Semiconductor |
2SC1473 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage 2SC1473 VCBO 250 V c type (Emitter ope |
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Panasonic Semiconductor |
Silicon NPN Transistor 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collecto |
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Panasonic Semiconductor |
NPN Transistor 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C |
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Panasonic |
NTSC Color Camera Synchronizing Signal Generator LSI a built-in 4f SC (14.31818 MHz) crystal oscillator circuit and divides that frequency to generate the horizontal synchronizing signal fH (15.7 kHz), the vertical synchronizing signal fV (60 Hz), and the composite synchronizing signal. It also divides |
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Panasonic Semiconductor |
2SC5346 q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Panasonic |
2SC5244A 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1 |
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Panasonic |
Silicon MOSFET er Off-state Current 8 Operating Current 9 Auto-restart Threshold Voltage 10 UV Lockout Threshold Voltage 11 Auto-restart maintain Voltage 12 Auto-restart maintain Time 13 Auto-restart hysteresis Voltage 14 Control Clamp Voltage 15 Auto-restart duty |
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