| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic |
Fast Recovery Diodes q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forw |
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Panasonic |
Silicon epitaxial planar type • Three MA3X704As in the same direction are contained in one package • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.8 |
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Panasonic |
Fast Recovery Diodes q High reverse voltage VR q Low forward voltage VF q Fast reverse recovery time trr s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forw |
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Panasonic |
A/D D/A Converter |
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Panasonic |
Fast Recovery Diodes cation circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement |
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Panasonic |
Fast Recovery Diode • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Ratin |
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Panasonic |
Silicon planer type (cathode common) q q Unit : mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Low forward voltage V F Fast reverse recovery time trr 16.7±0.3 q High reverse voltage VR 7.5±0.2 ø3.1±0.1 4.2±0.2 1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1 +0.2 14.0±0.5 Solder Dip 4.0 2.54±0.25 s A |
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Panasonic |
Silicon planer type (cathode common) q q Unit : mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Low forward voltage V F Fast reverse recovery time trr 16.7±0.3 q High reverse voltage VR 7.5±0.2 ø3.1±0.1 4.2±0.2 1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1 +0.2 14.0±0.5 Solder Dip 4.0 2.54±0.25 s A |
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Panasonic |
Band Switching Diodes 5° 243 MA6X078 IF V F 103 Ta = 25°C Band Switching Diodes CD VR 10 f = 1 MHz Ta = 25°C 102 IR T a VR = 33 V 5 3 2 Reverse current IR (nA) 102 Diode capacitance CD (pF) Forward current IF (mA) 10 10 1 1 0.5 0.3 0.2 1 10−1 10−1 |
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Panasonic |
Silicon epitaxial planar type • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 2.8 − 0.3 0.65 ± 0.15 6 1.9 ± 0.1 0.95 |
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Panasonic |
Fast Recovery Diodes • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage VRRM VRSM 300 300 Forwar |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 / ■ Absolute Maximum Ratin |
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Panasonic |
Silicon planer type (cathode common) q q Unit : mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Low forward voltage V F Fast reverse recovery time trr 16.7±0.3 q High reverse voltage VR 7.5±0.2 ø3.1±0.1 4.2±0.2 1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1 +0.2 14.0±0.5 Solder Dip 4.0 2.54±0.25 s A |
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Panasonic |
Silicon planer type (cathode common) q q q q 0.7 15.0±0.3 11.0±0.2 Unit : mm 5.0±0.2 3.2 High reverse voltage VR Low forward voltage V F Fast reverse recovery time trr 21.0±0.5 15.0±0.2 Cathode common dual type ø3.2±0.1 16.2±0.5 12.5 3.5 Solder Dip 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0 |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 13.7±0.2 4.2±0.2 Solder Di |
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Panasonic |
Fast Recovery Diode φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 13.7±0.2 4.2±0.2 Solder Di |
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Panasonic |
Silicon epitaxial planar type 5° 243 MA6X078 IF V F 103 Ta = 25°C Band Switching Diodes CD VR 10 f = 1 MHz Ta = 25°C 102 IR T a VR = 33 V 5 3 2 Reverse current IR (nA) 102 Diode capacitance CD (pF) Forward current IF (mA) 10 10 1 1 0.5 0.3 0.2 1 10−1 10−1 |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Three-element contained in one package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct 0.65 ± 0.15 6 1.9 ± 0.2 0.95 0.95 2.8 + 0.2 − 0.3 + 0.25 1.5 − 0.05 1 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + |
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Panasonic |
Silicon epitaxial planar type Switching Diodes 1 1 MA6X122 IF VF 103 10 Ta = 150°C 102 1 Ta = 150°C 10 100°C 25°C − 20°C 1 Switching Diodes IR V R 1.6 1.4 VF Ta Forward current IF (mA) Forward voltage VF (V) 100°C Reverse current IR (µA) 1.2 1.0 0.8 0.6 0.4 0.2 0 −40 10 mA 3 mA 1 |
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Panasonic |
Silicon epitaxial planar type 1 MA6X123 IF VF 103 102 Ta = 150°C 102 10 Switching Diodes IR V R 1.6 1.4 VF Ta Forward current IF (mA) Reverse current IR (µA) Forward voltage VF (V) Ta = 150°C 10 100°C 25°C − 20°C 1 100°C 1 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 IF = 100 mA |
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