| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic |
Silicon epitaxial planar type Switching Diodes q Short reverse recovery period trr q Small capacity between pins, Ct s Absolute Maximum Ratings (Ta= 25˚C) Parameter MA150 MA161 Reverse voltage (DC) MA162 MA162A MA150 Repetitive peak reverse voltage MA161 MA162 MA162A Average forward cu |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Small terminal capacitance, Ct • Can be connected in series I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperatu |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Allowing high-density mounting • Ensuring the forward current (Average) capacity IF(AV) = 200 mA • High breakdown voltage: VR = 80 V 1.25±0.1 0.35±0.1 Unit: mm 0.7±0.1 1 0 to 0.1 1.7±0.1 2.5±0.2 0 to 0.1 5˚ ■ Absolute Maximum Ratings Ta = 25° |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Two isolated elements contained in one package, allowing high- density mounting • Two diodes are connected in series in the package ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forwar |
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Panasonic |
Vertical Driver LSI for Video Camera CCD Area Image Sensor a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Zener diodes, produces stabilized +15.0V and –10.0V power supp |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Small S-mini type package allowing high density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Forward current |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Small terminal capacitance, Ct • Two diodes are connected in series in the package s Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage MA3X153 (DC) MA3X153A VR 40 80 Peak reverse voltage MA3X153 MA3X153A VRM 40 |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Short reverse recovery time trr • Small terminal capacitance Ct ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage MA2C165 MA2C166 VR 35 50 MA2C167 75 Repetitive peak MA2C165 reverse voltage MA2C166 VRRM 35 50 |
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Panasonic Semiconductor |
Switching Diodes • Low forward dynamic resistance rf • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-re |
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Panasonic |
Schottky Barrier Diode • IF(AV) = 20 A rectification is possible • Cathode-common dual type • Low forward voltage: VF < 0.47 V (at IF = 10 A) • TO-220D-A1 package I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse-voltage VRRM |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Motion Sensor detection with 3mm diameter miniature flat lens A 3 mm diameter flat surface lens is possible using Panasonic’s unique Lens Formation Technology for silicon substrates, making the lens operating substantially small compared to other conventional sen |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Four isolated elements contained in one package, allowing high- density mounting • High breakdown voltage: VR = 80 V 32 0.30+ –00..0150 0.50+ –00..0150 10˚ 1 Productnnu ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse volta |
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Panasonic |
Switching Diodes • Small S-mini type package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V) I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) |
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Panasonic |
Rectifier Diodes • Three isolated elements are contained in one package, allowing high-density mounting • Allowing high voltage rectification ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Output curren |
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Panasonic |
Silicon epitaxial planar type Switching Diodes • Short reverse recovery time trr • Small terminal capacitance Ct ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge cur |
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