| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
2SD2137 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter C |
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Panasonic Semiconductor |
2SD2136 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base vo |
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Panasonic Semiconductor |
2SD2139 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Uni |
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Panasonic Semiconductor |
Silicon NPN Transistor q q 10.0±0.2 1.0 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP |
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Panasonic |
Power Transistors • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector |
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Panasonic |
Silicon NPN Power Transistor |
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Panasonic |
Silicon NPN Power Transistor |
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Panasonic |
NPN Transistor |
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Panasonic |
Line Filters ] (Tol ±20 %) 5.60 0.065 4.70 0.060 3.90 0.052 3.30 0.041 2.70 0.031 1.50 0.028 0.80 0.016 0.40 0.015 max. 0.26 0.012 max. 0.15 0.0085 max. Current (A rms) max. 3.4 3.5 3.7 4.2 4.5 5.0 7.0 8.0 9.0 10.0 ■ Series H ● Type 200 Dimensions in |
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Panasonic Semiconductor |
Silicon NPN Transistor 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) |
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Panasonic Semiconductor |
Silicon PNP Transistor q q q 0.65 max. 1.0 1.0 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage P |
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Panasonic Semiconductor |
Silicon epitaxial planar type • Forward current (Average) IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.4 V 1.6±0.1 1 0.80±0.05 0 to 0.1 2.6±0.1 3.5±0.1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Fo |
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Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) |
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Panasonic |
Silicon epitaxial planar type • IF(AV) = 1 A rectification is possible • Low forward voltage VF • Mini type 3-pin package 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse vo |
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Panasonic |
Line Filters ] (Tol ±20 %) 5.60 0.065 4.70 0.060 3.90 0.052 3.30 0.041 2.70 0.031 1.50 0.028 0.80 0.016 0.40 0.015 max. 0.26 0.012 max. 0.15 0.0085 max. Current (A rms) max. 3.4 3.5 3.7 4.2 4.5 5.0 7.0 8.0 9.0 10.0 ■ Series H ● Type 200 Dimensions in |
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Panasonic Semiconductor |
Silicon NPN Transistor 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector curr |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s |
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Panasonic Semiconductor |
Silicon NPN Transistor 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Uni |
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