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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic |
Silicon NPN Transistor 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0 –+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape p |
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Panasonic |
Silicon NPN Transistor 9.9±0.3 φ3.2±0.1 2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.1±0.2 8.0±0.2 Solder Dip / s Absolute Maximum Ratings |
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Panasonic |
Silicon MOS Type Integrated Circuits 5.7 6.2 4.5 8.0 190 5.0 9.0 245 5.5 10.0 300 µA µA VCC = 15 V, VD = 5 V, ICL = 50 µA VCC = 15 V, VD = 5 V, ICL = 50 µA 3.0 3˚ to 15˚ +0 0.25 -0.05 .10 % V V V : 2003 8 SLB00053AJD 1 Free Datasheet http://www.datasheet4u.net/ はRoHS( |
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Panasonic Semiconductor |
2SC5036 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink |
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Panasonic |
2SC5032 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink |
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Panasonic |
Silicon NPN epitaxial planar type High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Ratin |
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Panasonic Semiconductor |
Optoisolators High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mount |
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Panasonic Semiconductor |
Optoisolators High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mount |
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Panasonic Semiconductor |
NPN Transistor 1.6±0.2 1.5±0.1 • Low noise figure NF 2.5±0.1 3˚ 4.0 –+00..2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape p |
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Panasonic Semiconductor |
NPN TRANSISTOR |
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Panasonic Semiconductor |
NPN Transistor 2.5±0.1 3˚ 4.0 –+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC= |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic |
50inch Class 720p Plasma HDTV Service Manual such as insulation barriers, insulation papers shields are properly installed. 6. After servicing, make the following leakage current checks to prevent the customer from being exposed to shock hazards. 1.1.1. Leakage Current Cold Check 1. Unplug th |
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Panasonic Semiconductor |
2SC5026 2.5±0.1 3˚ 4.0 –+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and |
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Panasonic Semiconductor |
NPN TRANSISTOR q q 0.65 max. 1.0 1.0 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collecto |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack packag |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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