| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Panasonic Semiconductor |
2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
|
|
|
|
Panasonic |
2SB1490 • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ Ab |
|
|
|
|
Panasonic |
2SB1416 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba |
|
|
|
|
Panasonic |
Silicon PNP epitaxial planar type Power Transistors q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Col |
|
|
|
|
Panasonic Semiconductor |
2SB1417 q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo |
|
|
|
|
Panasonic |
Carbon Composition Trimmer Potentiometers ● Top-adjust or side-adjust available ● Radial taping supported ● High reliability (dustproof construction) ■ Recommended Applications ● Audio Visual Equipment, Home Electrical Appliances ■ Explanation of Part Numbers 1234 EVND 5 6 7 8 9 10 11 12 |
|
|
|
|
Panasonic |
PNP Transistor 0 0 20 40 60 80 100 120 140 160 Ta (˚C) IC (A) IC (A) IC — VCE(sat) –8 (2) (1) –IC/ –IB=250 (1) –7 (2) –IC/ –IB=500 (3) –IC/ –IB=1000 (3) TC=25˚C –6 –5 –4 –3 –2 –1 0 0 –2 –4 –6 –8 VCE(sat) (V) 2SB1464 IC — VBE(sat) –8 (2) (3) (1) –7 –6 –5 |
|
|
|
|
Panasonic |
Silicon PNP epitaxial planar type Power Transistors q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Col |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High fo |
|
|
|
|
Panasonic |
Carbon Composition Trimmer Potentiometers ● Top-adjust or side-adjust available ● Radial taping supported ● High reliability (dustproof construction) ■ Recommended Applications ● Audio Visual Equipment, Home Electrical Appliances ■ Explanation of Part Numbers 1234 EVND 5 6 7 8 9 10 11 12 |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector to ba |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Darlington q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Para |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor q q q Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings |
|
|
|
|
Panasonic |
Chip Resistor Array l High density 2 resistors in 4 resistors in 2 resistors in 4 resistors in 8 resistors in 2 resistors in 4 resistors in 4 resistors in 0.8 mm ´ 0.6 mm 1.4 mm ´ 0.6 mm 1.0 mm ´ 1.0 mm 2.0 mm ´ 1.0 mm 3.8 mm ´ 1.6 mm 1.6 mm ´ 1.6 mm 3.2 mm ´ 1.6 mm 5.1 |
|
|
|
|
Panasonic Semiconductor |
Silicon PNP Transistor • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ A |
|
|
|
|
Panasonic |
Chip Resistor Array ● High density 2 resistors in 0.8 mm ҂ 0.6 mm size 4 resistors in 1.4 mm ҂ 0.6 mm size 2 resistors in 1.0 mm ҂ 1.0 mm size 4 resistors in 2.0 mm ҂ 1.0 mm size 8 resistors in 3.8 mm ҂ 1.6 mm size 2 resistors in 1.6 mm ҂ 1.6 mm size 4 resistors in 3.2 |
|