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Panasonic AQW DataSheet

No. Partie # Fabricant Description Fiche Technique
1
AQW610EH

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
2
AQW610EHA

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
3
AQW654A

Panasonic
Photo MOS Relay
1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without di
Datasheet
4
AQW614A

Panasonic
Photo MOS Relays
1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A and 1 Form B PhotoMOS 2. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 3. Controls load currents up to 0.13 A with 5 mA input cur
Datasheet
5
AQW612EHA

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
6
AQW454

Panasonic
Photo MOS Relays
1. 2 Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Cont
Datasheet
7
AQW216A

Panasonic
Photo MOS Relay
1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
8
AQW214S

Panasonic
Photo MOS Relay
1. 2 channels in miniature SOP8-pin design The device comes in a super-miniature SO package measuring (W) 4.4 × (L) 9.37 × (H) 2.1 mm (W) .173× (L) .369× (H) .083 inch —approx. 38% of the volume and 66% of the footprint size of DIP8-pin type. 2. Cont
Datasheet
9
AQW212

Panasonic
Photo MOS Relay
1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
10
AQW216EH

Panasonic
Photo MOS Relay
1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
11
AQW224N

Panasonic
Photo MOS Relays
Datasheet
12
AQW614EH

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
13
AQW614EHA

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
14
AQW612EH

Panasonic
PhotoMOS RELAYS
1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2
Datasheet
15
AQW654

Panasonic
Photo MOS Relay
1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without di
Datasheet
16
AQW217

Panasonic
Photo MOS Relay
1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
17
AQW216

Panasonic
Photo MOS Relay
1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
18
AQW212A

Panasonic
Photo MOS Relay
1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 × (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
19
AQW212EH

Panasonic
Photo MOS Relay
1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls lo
Datasheet
20
AQW612S

Panasonic
Photo MOS Relays
1. Normally open and normally closed contacts in a SOP package The device comes in a miniature SOP measuring (W) 4.4 × (L) 9.37 × (H) 2.1 mm (W) .173× (L) .369× (H) .083 inch — approx. 38% of the volume and 66% of the footprint size of DIP type. 2. 6
Datasheet



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