No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic |
2SC5885 9.9±0.3 4.6±0.2 2.9±0.2 15.0±0.3 8.0±0.2 1.0±0.1 • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area φ3.2±0.1 • Built-in dumper diode I Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 13.7-+00..25 2.0±0.2 |
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Panasonic |
2SC829 q Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Jun |
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Panasonic |
2SC4767 q High transition frequency fT. q Output of 0.6W is obtained in the VHF band (f=175MHz). s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector |
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Panasonic |
2SC1846 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Output of 3 W can be obtained by a complementary pair with 2SA0885 • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolut |
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Panasonic |
2SC5909 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings |
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Panasonic Semiconductor |
2SC4212 I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj |
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Panasonic Semiconductor |
Silicon NPN Transistor q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with on |
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Panasonic |
2SC3507 11.0±0.2 (3.2) • High-speed switching 21.0±0.5 15.0±0.2 • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with |
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Panasonic |
2SC5407 φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Co |
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Panasonic Semiconductor |
2SC1473 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage 2SC1473 VCBO 250 V c type (Emitter ope |
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Panasonic Semiconductor |
Silicon NPN Transistor 5.1±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collecto |
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Panasonic Semiconductor |
2SC5346 q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to |
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Panasonic |
2SC5244A 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1 |
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Panasonic |
2SC3975 (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) 21.0±0.5 15.0±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Ful |
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Panasonic |
2SC5521 contribute to higher performing, more reliable home-use TVs that cost less. s Features www.DataSheet4U.com q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V q Low loss:VCE(sat)<3V q Broad area of safe-operation. s Spacifications Param |
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Panasonic Semiconductor |
2SC2634 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter vol |
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Panasonic Semiconductor |
2SC3611 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 • High transition frequency fT • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installa- tion to th |
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Panasonic Semiconductor |
Silicon NPN Transistor Package Low collector-emitter saturation voltage VCE(sat) Code Complementary pair with 2SA0719 TO-92B-B1 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V Pin N |
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Panasonic Semiconductor |
Silicon NPN Transistor q High collector to emitter voltage VCEO. q High transition frequency fT. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector |
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Panasonic Semiconductor |
NPN TRANSISTOR q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be |
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