No. | Partie # | Fabricant | Description | Fiche Technique |
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PINGWEI |
N-Channel MOSFET 11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles |
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PINGWEI |
N-Channel MOSFET 11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles |
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PINGWEI |
N-Channel MOSFET 11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles |
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|
|
PINGWEI |
N-Channel MOSFET 11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unles |
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