| No. | Partie # | Fabricant | Description | Fiche Technique |
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PHILOP |
600V N-Channel MOSFET • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability General Description This Power MOSFET is produced using PHILOP's advanced planar stripe |
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