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PAN JIT MMB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MMBT3904W

Pan Jit International
NPN GENERAL PURPOSE SWITCHING TRANSISTOR

• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 200mA
• Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1
Datasheet
2
MMBT3906W

Pan Jit International
PNP GENERAL PURPOSE SWITCHING TRANSISTOR

• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA
Datasheet
3
MMBT4401

Pan Jit International
NPN GENERAL PURPOSE SWITCHING TRANSISTOR

• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
• In compliance with EU RoHS 2002/95/EC directives .119(3.00) .110(2.80) Unit: inch (mm) .007(.20)MIN .103(2.60) .086(2.20) .056(1.40) .04
Datasheet
4
MMBD717

PAN JIT
SURFACE MOUNT SCHOTTKY DIODES

• Very Low VF: 0.32V (Typ) at IF = 1mA
• Low Capacitance: 2.5 pF (Max) at VR=0V
• Extremely Fast Switching Speed
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Metho
Datasheet
5
MMBT4403

Pan Jit International
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary (NPN) device: MMBT4401 Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . (Hal
Datasheet
6
MMBZ5260BTW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die Construction
• 200mW Power Dissipation
• Zener Voltages from 2.4~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable pe
Datasheet
7
MMBZ5249BTW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die Construction
• 200mW Power Dissipation
• Zener Voltages from 2.4~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable pe
Datasheet
8
MMBD3004C

Pan Jit International
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

• Fast Switching Speed
• Surface Mount Package ldeally Suited for Automatic Insertion
• High Conductance
• High Reverse Breakdown Voltage Rating
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Sold
Datasheet
9
MMBT5401

Pan Jit International
HIGH VOLTAGE TRANSISTOR

• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case : SOT-23 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Standard packaging : 8mm tape
• Weight : approximately 0.008gram
• Marking : M5A MAXIMUM RATINGS
Datasheet
10
MMBD6100

Pan Jit International
SURFACE MOUNT SWITCHING DIODES

• Dual, common cathode configuration
• Very fast reverse recovery ( Trr< 2.0ns typical )
• Low capacitance ( < 2.5pF @ 0V)
• Surface mount package ideally suited for anuomatic insetion
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green
Datasheet
11
MMBD6050

Pan Jit International
SURFACE MOUNT SWITCHING DIODES

• Very fast reverse recovery ( trr < 2.0 ns typical )
• Low capacitance ( < 2.5pF @ 0V )
• Surface mount package ideally suited for automatic insertion.
• Pb free product are available : 99% Sn above can meet RoHS environment substance directive requ
Datasheet
12
MMBZ5238BTW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die Construction
• 200mW Power Dissipation
• Zener Voltages from 2.4~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable pe
Datasheet
13
MMBZ5259BW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable
Datasheet
14
MMBZ5257BW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable
Datasheet
15
MMBZ5246BW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable
Datasheet
16
MMBZ5238BW

PAN JIT
SURFACE MOUNT SILICON ZENER DIODES

• Planar Die construction
• 200mW Power Dissipation
• Zener Voltages from 2.4V~51V
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable
Datasheet
17
MMBD717A

PAN JIT
SURFACE MOUNT SCHOTTKY DIODES

• Very Low VF: 0.32V (Typ) at IF = 1mA
• Low Capacitance: 2.5 pF (Max) at VR=0V
• Extremely Fast Switching Speed
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Metho
Datasheet
18
MMBD701

Pan Jit International
SURFACE MOUNT SCHOTTKY DIODE

• Extremely low minority carrier lifetime
• Low capacitance (0.4pF @ 20V typical)
• Low reverse leakage (30nA @ 35V typical)
• Surface mount package ideally suited for automatic insertion
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Gr
Datasheet
19
MMBT3904FN3

Pan Jit International
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
0.042(1.05) 0.037(0.95) 0.026(0.65) 0.021(0.55)
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 200mA
• In compliance with EU RoHS 2002/95/EC directives Unit : inch(mm) 0.022(0.55) 0.047(0.45
Datasheet
20
MMBT3906

Pan Jit International
PNP GENERAL PURPOSE SWITCHING TRANSISTOR

• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .056(1.40) .047(1.20) .119(3.00) .
Datasheet



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