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PACO |
NPN Silicon Epitaxial Planar Transistor urrent IE at Gpe = -30 dB, f = 200 MHz IAGC Reverse Transfer Capacitance at VCB = 10 V, f = 1 MHz Cre Current Gain Bandwidth Product at VCE = 10 V, IC = 3 mA fT Power Gain at VCE = 10 V, f = 200 MHz, RS = 50 Ω, IE = -3 mA Gpe Noise Figure at |
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PACO |
NPN Transistor |
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PACO |
NPN Transistor |
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PACO |
NPN Silicon Epitaxial Planar Transistor Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Dra |
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PACO |
NPN Silicon Epitaxial Planar Transistor Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Turn-on Time at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -VBE = 1.5 V Storage Time at IC = 10 mA, IB1 = -IB2 = 10 mA Turn-off Time at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -IB2 = 1.5 mA Gain Bandwidth |
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PACO |
NPN Silicon Epitaxial Planar Transistor V, IE = 0.5 mA, f = 1 KHz, RS = 500 Ω Symbol VCBO VCEO VEBO IC Ptot Tj Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value 60 50 5 200 300 150 - 55 to + 150 Unit V V V mA mW OC OC Symbol Min. R hFE O hFE Y hFE G hFE L hFE ICBO IEBO |
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