| No. | Partie # | Fabricant | Description | Fiche Technique |
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OSRAM |
Silicon Photodiode ——Package: hermetically sealed ——Especially suitable for applications from 350 nm to 820 nm ——Adapted to human eye sensitivity (Vλ) ——Package similar to TO-5 Ordering Information Type Photocurrent BPW 21 Ev = 1000 lx; Std. Light A; VR = 5 V |
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OSRAM |
Silicon PIN Photodiode ——Package: Epoxy, diffuse ——Corrosion Robustness Class: 3B ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications from 400 nm to 1100 nm ——Short switching time (typ. 20 ns) ——DIL plastic package with high pa |
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OSRAM |
Silicon PIN Photodiode ——Package: black epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications from 780 nm to 1100 nm ——Short switching time (typ. 20 ns) ——DIL plastic package with high packing density Ordering Information |
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OSRAM |
Silicon PIN Photodiode • Especially suitable for the wavelength range of 780 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • Suitable for reflow soldering • The product qualification test plan is based on the guidelines |
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OSRAM |
Silicon PIN Photodiode ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Clas |
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OSRAM |
Silicon PIN Photodiode • Especially suitable for the wavelength range of 830 nm to 880 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 FAS/(R18R): Suitable for vapor-phase and IR-reflow soldering Applications • IR-remote cont |
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OSRAM |
Silicon PIN Photodiode ——Package: Epoxy, diffuse ——Corrosion Robustness Class: 3B ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications from 350 nm to 1100 nm ——Short switching time (typ. 25 ns) ——DIL plastic package with high pa |
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OSRAM |
Silicon PIN Photodiode ——Package: clear epoxy ——Corrosion Robustness Class: 3B ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Disc |
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OSRAM |
Silicon PIN Photodiode ——Package: clear epoxy ——Corrosion Robustness Class: 3B ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications from 350 nm to 1100 nm ——Short switching time (typ. 25 ns) ——DIL plastic package with high packi |
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OSRAM |
Silicon PIN Photodiode ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class |
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OSRAM |
Silicon PIN Photodiode • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • The product qualification test plan is based on the guidelines of AEC |
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OSRAM |
Silicon PIN Photodiode • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density Applications • Photointerrupters • Industrial electronics • For contro |
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OSRAM |
Silicon PIN Photodiode ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class |
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