| No. | Partie # | Fabricant | Description | Fiche Technique |
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SemiWell Semiconductor |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ STF20A60 UL : E228720 Symbol ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220F General Description This de |
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SemiWell Semiconductor |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220F General Description This device is fully isolated packag |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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SemiWell Semiconductor |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ◆ STF12A60 UL : E228720 Symbol ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is f |
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SemiWell Semiconductor |
Sensitive Gate Triacs Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ www.DataSheet4U.com General Description This device is sensitive gate |
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SemiWell Semiconductor |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ STF6A60 UL : E228720 Symbol ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ www.DataSheet4U.com TO-220F General |
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WINSEMI SEMICONDUCTOR |
Bi-Directional Triode Thyristor ◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) TO-220F ▼▲ ○ 3.Gate 1.T1 ○ General Description This device is fully isolated package suitable f |
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ON Semiconductor |
USB Filter • Provides USB Line Termination, Filtering and ESD Protection • Single IC Offers Cost Savings by Replacing 3 Resistors, 2 Capacitors, and 5 TVs diodes • Bi−directional EMI Filtering Prevents Noise from Entering/Leaving the System • IEC61000−4−2 ESD |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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ON Semiconductor |
USB Filter |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) < 7Ω ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching po |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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