| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
200mA CMOS Low-Dropout Regulator • • • • • • • • • • • • Low quiescent current ( IB = 40 μA (typ.) at IOUT = 0 mA ) Low stand-by current ( IB(OFF) = 0.1 μA (typ.) @ Stand-by mode ) Low-dropout voltage ( VIN - VOUT = 85 mV (typ.) at TCR5SB30, IOUT = 50 mA ) High current output ( IOUT |
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ON Semiconductor |
Schottky Barrier Diode • Small interterminal capacitance (C=0.25pF typ) • Less parastic components • Small forward voltage • Series connection of 2 elements in a small-sized package facilitates high density mounting this goods-applied equipment to be made smaller Specifica |
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