| No. | Partie # | Fabricant | Description | Fiche Technique |
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Taiwan Semiconductor |
Schottky Barrier Rectifiers Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For us |
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Taiwan Semiconductor |
Schottky Barrier Rectifiers Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For us |
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Hitachi Semiconductor |
High Density Dynamic RAM Module |
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ON Semiconductor |
Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 20 − 60 VOLTS Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings AEC−Q101 Qualified and PPAP Capable SBRD8 Prefix for Automotive and Other Application |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are |
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ON Semiconductor |
SWITCHMODE Power Rectifier • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Compact Size • Lead Formed for Surface Mount • SBRD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; |
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ON Semiconductor |
Switch-mode Power Rectifiers • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca |
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ON Semiconductor |
Switch-mode Power Rectifiers • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca |
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ON Semiconductor |
Switch-mode Power Rectifiers • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca |
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ON Semiconductor |
Switch-mode Power Rectifiers • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca |
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ON Semiconductor |
Switch-mode Power Rectifiers • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Ca |
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SemiWell Semiconductor |
High Voltage Fast-Switching NPN Power Transistor - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical [email protected]/0.25A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This devices is designed fo |
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Global Semiconductor |
Ultra Low VF Schottky Rectifier This low cost Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical applications are in switching power supplies, |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are |
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Hitachi Semiconductor |
High Density Dynamic RAM Module • 72-pin single in-line package Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness) Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed Access time: tRAC = 60/70ns (max) • Low power dissipation Active mode: 6.41 |
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ON Semiconductor |
Power Rectifier Features • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94, V−0 @ 0.125 in • Short Heatsink Tab Manufactured − Not Sheared • Similar in Size to the Industry |
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ON Semiconductor |
Power Rectifier • Center−Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Short Heat Sink Tab Manufactured − Not Sheared • Similar in Size to the Industry Standard T |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are |
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