| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Dual PNP Bias Resistor Transistors • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* • These Devices are Pb−Fr |
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EIC discrete Semiconductors |
(D3SBAx0) SILICON BRIDGE RECTIFIER : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIF |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIF |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIF |
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ON Semiconductor |
Dual Common Cathode Schottky Barrier Diodes Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, |
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Dynex Semiconductor |
Phase Control Thyristor s s s Double Side Cooling High Surge Capability Low Turn-on Losses KEY PARAMETERS VDRM (max) IT(AV) (max) ITSM dV/dt dI/dt 1800V 2694A 50000A 1000V/µs 1000A/µs APPLICATIONS s s s High Voltage Power Converters DC Motor Control High Voltage Power |
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Dynex Semiconductor |
Phase Control Thyristor s Double Side Cooling s High Surge Capability s Low Turn-on Losses KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 2800V 2004A 35000A 1000V/µs 500A/µs APPLICATIONS s High Voltage Power Converters s High Voltage Power Supplies s Motor Control VOLTAGE RA |
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Dynex Semiconductor |
Phase Control Thyristor s Double Side Cooling s High Surge Capability s Low Turn-on Losses KEY PARAMETERS VDRM IT(AV) ITSM dVdt dI/dt 3600V 1690A 25000A 1000V/µs 300A/µs APPLICATIONS s High Voltage Power Converters s High Voltage Power Supplies s Motor Control VOLTAGE RA |
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ON Semiconductor |
Digital Transistors • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb−Fre |
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ON Semiconductor |
(NSBA114EDXV6T5 Series) Dual Bias Resistor Transistors (3) R1 Q1 Q2 R2 (4) R1 (5) (6) http://onsemi.com (2) R2 (1) • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices www.DataSheet4U.com 1 SOT−563 CASE 463A PLASTIC STYLE 1 MARKING DIAGRAM MAXIMUM |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIER : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIF |
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ON Semiconductor |
LVPECL Clock Oscillator http://onsemi.com • • • • • • • 6 PIN CLCC TBD SUFFIX CASE 848AB LVPECL Differential Output Uses High Q Fundamental Mode Crystal and PLL Multiplier Ultra Low Jitter and Phase Noise − 0.4 ps (12 kHz − 20 MHz) Hermetically Sealed Ceramic SMD Package |
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ON Semiconductor |
Dual PNP Bias Resistor Transistors |
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America Semiconductor |
Silicon Bridge Rectifier |
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America Semiconductor |
Silicon Bridge Rectifier |
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ON Semiconductor |
Dual PNP Bias Resistor Transistors |
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ON Semiconductor |
Dual PNP Bias Resistor Transistors |
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ON Semiconductor |
Digital Transistors • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb−Fre |
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ON Semiconductor |
Digital Transistors Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Fre |
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ON Semiconductor |
Dual Switching Diode Common Cathode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C) Rating |
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