| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SB1375 (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Panasonic Semiconductor |
2SB1148 q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Par |
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Toshiba Semiconductor |
2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 |
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Panasonic Semiconductor |
Silicon PNP triple diffusion planar type Transistor • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum |
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Toshiba Semiconductor |
Silicon PNP Transistor dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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ON Semiconductor |
Bipolar Transistor • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volt |
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Toshiba Semiconductor |
2SB1020A |
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Panasonic Semiconductor |
2SB1254 3C61-XX LSD3C62-XX LSD3C64-XX LSD3C65-XX LSD3C63-XX GaP λP (nm) Vf(v) @ 20mA Min Max 2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4 Iv(mcd) @ 10mA Min 1.5 2.2 2.5 3.5 2.5 1.5 2.2 2.5 3.5 2.5 PIN NO.1 8.0 (0.315") 11.0 (0.433") 2.0X4= 8.0 (0.315") em |
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Panasonic Semiconductor |
2SB1434 • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 1 2 3 Collector to base voltage Collector to emitte |
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Panasonic Semiconductor |
2SB1030 q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak coll |
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Toshiba Semiconductor |
Silicon PNP Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Sanyo Semiconductor |
2SB1203 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Package Dimensions unit:mm 2045B [ |
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Toshiba Semiconductor |
2SB1429 |
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Panasonic Semiconductor |
2SB1108 |
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Hitachi Semiconductor |
2SB1391 — — — — — — Max Unit —V —V —V –10 µA –10 20000 –1.5 V –3.0 –2.0 V –3.5 Test conditions IC = –0.1 mA, IE = 0 IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 IC = –4 A, IB = –8 mA*1 IC = –8 |
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Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications SB1X Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 1 |
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Fairchild Semiconductor |
mWSaver Fairchild Power Switch (FPS) mWSaver™ Technology Achieve Low No-Load Power Consumption Less than 40 mW at 230 VAC (EMI Filter Loss Included) Meets 2013 ErP Standby Power Regulation (Less than 0.5 W Consumption with 0.25 W Load) for ATX Power and LCD TV Power Eliminate X-Ca |
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Hitachi Semiconductor |
2SB1031 |
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Panasonic Semiconductor |
2SB1503 q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Colle |
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Hitachi Semiconductor |
2SB1032 est I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off — — 1000 — — — — — — — Typ — — — — — — — — — — 0.8 4.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ |
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