ON Semiconductor QED fiche technique

No.	Partie #	Fabricant	Description
1	QED121	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • D= 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
2	QED122	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • D= 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
3	QED123	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • D= 880 nm REFERENCE SURFACE 0.305 (7.75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.040 (1.02) NOM 0.800 (20.3) MIN • Narrow Emission Angle, 18° • High Output Power • Package mate
4	QED221	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Wide Emission Angle, 40° • High Output Power • Package material and color: Clear, purple tinted, plastic  2001 Fairchild
5	QED223	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Wide Emission Angle, 40° • High Output Power • Package material and color: Clear, purple tinted, plastic  2001 Fairchild
6	QED423	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • • • • • • • λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30° High Output Power Package material and color: clear, purple tinted, plastic © 2002 Fairchild Semiconductor
7	QED234	ON Semiconductor	Plastic Infrared Light Emitting Diode • l = 940 nm • Chip Material = GaAs with AlGaAs Window • Package Type: T−1 3/4 (5 mm lens diameter) • Matched Photosensor: QSD123/124 • Medium Emission Angle, 40° • High Output Power • Package Material and Color: Clear, Untinted, Plastic • Ideal for
8	QED123	ON Semiconductor	Plastic Infrared Light Emitting Diode • l = 880 nm • Chip Material = AlGaAs • Package Type: T−1 3/4 (5 mm lens diameter) • Matched Photosensor: QSD123/QSD124 • Narrow Emission Angle, 16° • High Output Power • Package Material and Color: Clear, Peach Tinted, Plastic ABSOLUTE MAXIMUM RATI
9	QED222	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • != 880 nm • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Wide Emission Angle, 40° • High Output Power • Package material and color: Clear, purple tinted, plastic  2001 Fairchild
10	QED233	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • = 940 nm • Chip material =GaAs with AlGaAs window • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Emission Angle, 40° • High Output Power • Package material and color: Clear, untinted, plastic • Ideal for
11	QED234	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • = 940 nm • Chip material =GaAs with AlGaAs window • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Emission Angle, 40° • High Output Power • Package material and color: Clear, untinted, plastic • Ideal for
12	QED422	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • • • • • • • λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30° High Output Power Package material and color: clear, purple tinted, plastic © 2002 Fairchild Semiconductor
13	QED522	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • • • • • • • λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Narrow Emission Angle, 20° High Output Power Package material and color: clear, peach tinted, plastic © 2002 Fairchild Semiconductor Corpo
14	QED523	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • • • • • • • λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Narrow Emission Angle, 20° High Output Power Package material and color: clear, peach tinted, plastic © 2002 Fairchild Semiconductor Corpo
15	QED223	ON Semiconductor	Plastic Infrared Light Emitting Diode • l = 880 nm • Chip Material = AlGaAs • Package Type: T−1 3/4 (5 mm lens diameter) • Matched Photosensor: QSD123/QSD124 • Medium wide Emission Angle, 30° • High Output Power • Package Material and Color: Clear, Purple Tinted, Plastic ABSOLUTE MAXIMU