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ON Semiconductor QEB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
QEB373

Fairchild Semiconductor
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE

• T-3/4 (2mm) Surface Mount Package
• Tape & Reel Option (See Tape & Reel Specifications) 0.055 (1.4) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3)
• Lead Form Options: Gullwing, Yoke, Z-Bend
• Narrow Emission Angle, 24° 0.008 (0.21) 0.004 (0.11) 0
Datasheet
2
QEB421

Fairchild Semiconductor
SURFACE MOUNT INFRARED
0.043 (1.1) 0.020 (0.5) SCHEMATIC
• Wavelength = 880 nm, AlGaAs
• Wide Emission Angle, 120° ANODE CATHODE ANODE 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12)
• Surface Mount PLCC-2 Package
• High Power NOTES: 1. Dimensions are in inches (mm)
Datasheet
3
QEB363

Fairchild Semiconductor
SUBMINIATURE PLASTIC INFRARED EMITTING DIODE

• T-3/4 (2mm) Surface Mount Package
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend 0.055 (1.4) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3)
• Narrow Emission Angle, 24°
• Wavelength = 940 nm, GaAs
Datasheet
4
QEB441

Fairchild Semiconductor
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE

• D= 730 nm
• Chip Material: AlGaAs double heterojunction
• Surface Mount PLCC-2 package
• Wide Emission Angle, 120°
• High Power
• Tape and Reel option: .TR  2001 Fairchild Semiconductor Corporation DS300196 5/14/01 1 OF 4 www.fairchildsemi.com
Datasheet
5
QEB373

ON Semiconductor
Subminiature Plastic Infrared Emitting Diode

• T−3/4 (2 mm) Surface Mount Package
• Lead Form Options: Gullwing, Yoke, Z−Bend
• Narrow Emission Angle, 24°
• Wavelength = 875 nm, AlGaAs
• Clear Lens
• Matched Photosensor: QSB363
• High Radiant Intensity
• This is a Pb−Free and Halide Free Device
Datasheet



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