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Thinki Semiconductor |
Common Cathode Fast Recovery Epitaxial Diode · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION F60UP20DN usi |
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Thinki Semiconductor |
10 Ampere Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS |
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Cypress Semiconductor |
5V/ 3.3V/ ISR High-Performance CPLDs • In-System Reprogrammable™ (ISR™) CMOS CPLDs — JTAG interface for reconfigurability — Design changes do not cause pinout changes — Design changes do not cause timing changes • High density — 32 to 512 macrocells — 32 to 264 I/O pins — Five dedicated |
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Cypress Semiconductor |
5V/ 3.3V/ ISR High-Performance CPLDs • In-System Reprogrammable™ (ISR™) CMOS CPLDs — JTAG interface for reconfigurability — Design changes do not cause pinout changes — Design changes do not cause timing changes • High density — 32 to 512 macrocells — 32 to 264 I/O pins — Five dedicated |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Siemens Semiconductor Group |
IGBT chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 3.1 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage |
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Fairchild Semiconductor |
200V P-Channel MOSFET • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6 6 |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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ON Semiconductor |
MECHANICAL CASE OUTLINE |
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SemiWell Semiconductor |
Silicon Controlled Rectifiers Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 20 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Non-isolated Type ◆ ▼ 1 2 3 ○ 2. Anode 1. Cathode TO-220 General Description Standard gate triggering SCR is suitable |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Taiwan Semiconductor |
Glass Passivated High Efficient Plastic Rectifiers 2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers Voltage Range 50 to 800 Volts Current 2.0 Amperes DO-15 Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Superfast recovery |
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Taiwan Semiconductor |
Glass Passivated High Efficient Plastic Rectifiers 2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers Voltage Range 50 to 800 Volts Current 2.0 Amperes DO-15 Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Superfast recovery |
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Alpha & Omega Semiconductors |
Dual-In-Line Package Intelligent Power Module UL Recognized: UL 1775 File E345245 3-phase inverter module with optional built-in PFC diode 600V-20A (Trench Shielded Planar Gate IGBT) Low VF and Ultra-fast recovery diode for PFC (AIP3P20A060Q4) Built-in bootstrap diodes with integrated |
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Siemens Semiconductor Group |
IGBT ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.3 mA Col |
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Siemens Semiconductor Group |
IGBT ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.7 mA C |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Holtek Semiconductor |
HT6P20D · Operating voltage: 2V~12V · Low power consumption · Built-in oscillator needs only 5% resistor · 0/2/4/8 data selectable · 224 maximum address and data codes · Easy interface with an RF or IR medium · One time programmable process · Data active: D0 |
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Fairchild Semiconductor |
FYP2010DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIE |
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Taiwan Semiconductor |
Glass Passivated High Efficient Plastic Rectifiers 2.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers Voltage Range 50 to 800 Volts Current 2.0 Amperes DO-15 Plastic material used carries Underwriters Laboratory Classification 94V-0 Glass passivated cavity-free junction Superfast recovery |
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