No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
SiC Module • 15 mW / 1200 V M3S SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • S |
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ON Semiconductor |
SiC • 4 mW / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Solar Inverter • Uninterruptibl |
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ON Semiconductor |
Si/SiC Hybrid Module • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • These Devices are Pb−Free, Halogen Free/BFR Free and |
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ON Semiconductor |
Si/SiC Hybrid Module • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • These Devices are Pb−Free, Halogen Free/BFR Free and |
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ON Semiconductor |
Q2BOOST Module Flying Capacitor Boost Module 1000 V Field Stop 4 IGBTs and 1200 V SiC Diodes Low Inductive Layout Solder Pins Thermistor This is a Pb−Free Device Typical Applications Solar Inverter Energy Storage System BSTIN1 11~14 T11 G11 18 E11 |
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ON Semiconductor |
Three Level NPC Q2Pack Module Neutral Point Clamped Three−level Inverter Module Extreme Efficient Trench with Field Stop Technology Low Inductive Layout Low Package Height Thermistor Typical Applications Solar Inverters Energy Storage System Uninterruptable Power |
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ON Semiconductor |
SiC • 3 mW / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Solar Inverter • Uninterruptible |
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ON Semiconductor |
Si/SiC Hybrid Module • 1200 V Ultra Field Stop IGBTs • Low Reverse Recovery and Fast Switching SiC Diodes • 1600 V Bypass and Anti−parallel Diodes • Low Inductive Layout • Solderable Pins or Press−Fit Pins • Thermistor • Options with Pre−Applied Thermal Interface Materia |
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ON Semiconductor |
Si/SiC Hybrid Module • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • These Devices are Pb−Free, Halogen Free/BFR Free and |
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ON Semiconductor |
Si/SiC Hybrid Module • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • These Devices are Pb−Free, Halogen Free/BFR Free and |
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ON Semiconductor |
SiC Module • 20 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Char |
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ON Semiconductor |
Q2BOOST Module Flying Capacitor Boost Module 1000 V Field Stop 4 IGBTs and 1200 V SiC Diodes Low Inductive Layout Solder Pins Thermistor This is a Pb−Free Device Typical Applications Solar Inverter Energy Storage System BSTIN1 11~14 T11 G11 18 E11 |
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ON Semiconductor |
Three Level NPC Q2Pack Module Neutral Point Clamped Three−level Inverter Module Extreme Efficient Trench with Field Stop Technology Low Inductive Layout Low Package Height Thermistor Typical Applications Solar Inverters Energy Storage System Uninterruptable Power |
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ON Semiconductor |
3-Channel Q1 BOOST Module • 1200 V Ultra Field Stop IGBTs • Low Reverse Recovery and Fast Switching SiC Diodes • Low Inductive Layout • Press−fit Pins • Thermistor Typical Applications • Solar Inverters • ESS 21, 22 BYS1 19, 20 BST1 16 G1 15 E1 D13 T1 D12 D11 23, 24 BYS |
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ON Semiconductor |
IGBT • Split T−type Neutral Point Clamped Three−level Inverter Module • 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 mJ • 600 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 mJ • Baseplate • Solderable Pins • Thermistor Typical Applicati |
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ON Semiconductor |
SiC • Neutral Point: 10 mW, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • Pre−Applied TIM • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Electric Vehicle Charging Statio |
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ON Semiconductor |
F2 Boost Power Module • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • F2 Package with Solder Pins Typical Applications • Solar Inverter • Uninterruptible Power Supplies 32 ,33 IN +1 D 41 D 51 1 ,2 DC +1 |
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ON Semiconductor |
SiC Module • 20 mW/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Char |
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ON Semiconductor |
Neutral Point Clamp Module • Extremely Efficient Trench IGBT with Fieldstop Technology • Module Design Offers High Power Density • Low Inductive Layout • Q0PACK Package with Press−Fit Pins Typical Applications • Solar Inverters • Uninterruptable Power Supplies ABSOLUTE MAXIM |
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ON Semiconductor |
TMPIM 35A CIB/CI Module • Low Thermal Resistance • 6 mm Clearance Distance from Pin to Heatsink • Compact 73 mm × 40 mm × 8 mm Package • Solderable Pins • Thermistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Industrial |
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