| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
SiC MOSFET • 1200 V @ TJ = 175°C • Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o |
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Hitachi Semiconductor |
High efficiency through the use of piezo transformer ♦ High efficiency through the use of piezo transformer ♦ ♦ ♦ ♦ Very small, very thin and low power consumption design Suitable for low power consumption CFL from 0.6W to 2.0W External On/Off switching of backlight Dimmable from 100 down to 30 percent |
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ON Semiconductor |
Power MOSFET 4V drive High ESD protection Low On-Resistance AEC-Q101 qualified and PPAP capable Pb-Free, Halogen Free and RoHS compliance Typical Applications Reverse Battery Protection High Side Load Switch Automotive Body Controllers www.onsemi |
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ON Semiconductor |
N-Channel MOSFET • Typical RDS(on) = 0.43 mW at VGS = 10 V • Typical Qg(tot) = 139 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 3683 x 3000 80 3462 x 2708 200 x 200 76. |
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ON Semiconductor |
N-Channel MOSFET • Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 6604 x 4445 80 (6362 x 2059) x 2 330 x 6 |
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ON Semiconductor |
N-Channel Power MOSFET • Typical RDS(on) = 1.0 mW at VGS = 10 V • Typical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiC |
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Hitachi Semiconductor |
BACKLIGHT HITACHI INVC444 6 CN2 1 Maker Input connector HIROSE Output connector MITSUMI Type DF13-6P-1.25H M60-04-301-134P User’s connector housing DF13-6S-1.25C M60-04 1.0 Suitable LCM MAX2.0 |
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Austin Semiconductor |
512K x 32 Module nvSRAM 5.0V High Speed SRAM with Non-Volatile Storage • -55oC to 125oC Operation • True non-volatile SRAM (no batteries) • 20 ns, 25 ns, and 45 ns access times • Automatic STORE on power down with only a small • • • • • • • capacitor STORE to QuantumTrap® nonvolatile elements initiated by software, devi |
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ON Semiconductor |
Power MOSFET 4V drive High ESD protection Low On-Resistance Pb-Free, Halogen Free and RoHS compliance Typical Applications Reverse Battery Protection High Side Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symb |
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ON Semiconductor |
N-Channel MOSFET • Typical RDS(on) = 1.31 mW at VGS = 10 V • Typical Qg(tot) = 130 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV− |
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ON Semiconductor |
N-Channel MOSFET • Typical RDS(on) = 2.8 mW at VGS = 10 V • Typical Qg(tot) = 68 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag |
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ON Semiconductor |
N-Channel MOSFET • Typical RDS(on) = 2.2 mW at VGS = 10 V • Typical Qg(tot) = 86 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag |
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ON Semiconductor |
SiC MOSFET • 1200 V @ TJ = 175°C • Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A • High Speed Switching with Low Capacitance • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o |
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ON Semiconductor |
N-Channel Power MOSFET |
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