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ON Semiconductor |
ESD Protection Diode • 350 W Peak Power Dissipation per Line (8/20 msec Waveform) • Low Reverse Leakage Current (< 100 nA) • Low Capacitance High−Speed CAN Data Rates • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4, 30 kV − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 6 |
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ON Semiconductor |
Dual Line CAN/CAN-FD Bus Protector • Low Reverse Leakage Current (< 100 nA) • Low Parasitic Capacitance (< 6 pF) for High Signal Integrity of CAN−FD Data Rates • 175°C TJ(max) − Rated for High Temperature, Mission Critical Applications • IEC Compatibility: IEC 61000−4−2 (ESD): Level 4 |
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ON Semiconductor |
Low Capacitance Diode Array http://onsemi.com PIN CONFIGURATION AND SCHEMATIC VN I/O 1 2 6 5 N/C I/O • Low Capacitance (2.0 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • • • • • • • Machine Mode |
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ON Semiconductor |
4 Line Transient Voltage Suppressor Array a common cathode design which protects four independent lines in a single SOT−563 package. Features http://onsemi.com SOT−563 4−LINE TRANSIENT VOLTAGE SUPPRESSOR PIN ASSIGNMENT D1 D2 VCC 1 2 3 6 5 4 GND D3 GND • Protects up to 4 Lines in a Single S |
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ON Semiconductor |
6 Pin Bi-Directional Quad TVS Array http://onsemi.com 6 4 2, 5 3 1 • Bi−directional Protection for Four Lines in a • • • • • • • • • Single SOT−563 Package Peak Power Dissipation − 75 W (8x20 msec Waveform) Low Leakage Current (100 nA @ 12 V) Low Capacitance (< 15 pF) Provides ESD Pr |
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ON Semiconductor |
Low Capacitance Diode Array NUP4304MR6 is a MicroIntegration™ device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). http://onsemi.com PIN CONFIGURATION AND SCHEMATIC • Low Capac |
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ON Semiconductor |
ESD Protection Diode • 200 W Peak Power Dissipation per Line (8/20 ms Waveform) • Diode Capacitance Matching • Low Reverse Leakage Current (< 100 nA) • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 3.0 |
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ON Semiconductor |
Low Capacitance Diode • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B • Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) |
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ON Semiconductor |
ESD Protection Diode • SOT−23 Package Allows One Separate Bidirectional Configuration • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) • Low Reverse Leakage Current (< 100 nA) • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – |
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ON Semiconductor |
Low Capacitance Diode Array http://onsemi.com PIN CONFIGURATION AND SCHEMATIC • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • • • • • • • • Machine Model = Class C Human Bod |
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ON Semiconductor |
Single Line CAN/LIN Bus Protector http://onsemi.com SOT−23 BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER • • • • • • • • SOT−23 Package Allows One Separate Bidirectional Configuration 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Low Reverse Leakage Current (< 1 |
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ON Semiconductor |
Low Capacitance Surface Mount TVS http://onsemi.com • SO−8 Package • Peak Power − 500 Watts 8 x 20 mS • ESD Rating: IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (lightning) 23 (8/20 ms) UL Flammability Rating of 94V−0 High Speed Co |
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ON Semiconductor |
Low Capacitance Transient Voltage Suppressor Array http://onsemi.com 1 8 2 7 • Low Capacitance • Low Leakage Current < 1 mA @ 3 V • ESD Ratings: IEC61000−4−2, 18 kV (Contact) IEC61000−4−2, 30 kV (Air) ♦ Machine Model = Class C, 400 V ♦ Human Body Model = Class 3B, 8 kV DFN Package, 1.6 x 1.6 mm Mo |
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ON Semiconductor |
Low Capacitance Transient Voltage Suppressor Array http://onsemi.com 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 • Low Capacitance • Protection for the following IEC Standards: • • • IEC61000−4−2 (ESD) 15 kV (air) 8 kV (contact) IEC61000−4−4 (EFT) 40 A (5 / 50 ns) EC61000−4−5 (lightning) 12 A (8 / 20 |
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ON Semiconductor |
Low Capacitance SC-88 Diode-TVS Array http://onsemi.com • Low Capacitance (3 pF Maximum Between I/O Lines) • ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model SC−88 LOW CAPACITANCE DIODE TVS ARRAY 250 WATTS PEAK POWER 6 VOLTS |
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ON Semiconductor |
Low Capacitance TSOP-6 Diode-TVS Array http://onsemi.com • Low Capacitance (3 pF Maximum Between I/O Lines) • ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model • and Class C (Exceeding 400 V) per Machine Model Protection for the Following IEC Standards: IEC 61000−4−2 (ESD) 15 |
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ON Semiconductor |
5-Pin Bi-Directional Quad TVS Array • Bi−directional Protection for Four Lines in a Single TSOP−5 Package • Low Leakage Current • Low Capacitance • Provides ESD Protection for JEDEC Standards JESD22 − Machine Model = Class C − Human Body Model = Class 3B • Provides ESD Protection for I |
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ON Semiconductor |
Low Capacitance Diode Array NUP4304MR6 is a MicroIntegration™ device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). http://onsemi.com PIN CONFIGURATION AND SCHEMATIC • Low Capac |
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ON Semiconductor |
5-Line Transient Voltage Suppressor Array a monolithic common anode design which protects five independent lines in a single SOT−563 package. Features http://onsemi.com SOT−563 5−LINE TRANSIENT VOLTAGE SUPPRESSOR PIN ASSIGNMENT 1 2 3 PIN 1. 2. 3. 4. 5. 6. 6 5 4 CATHODE ANODE CATHODE CATHODE |
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ON Semiconductor |
Low Capacitance Quad Array • ESD Protection: IEC61000−4−2: Level 4 • Four Separate Unidirectional Configurations for Protection • Low Leakage Current < 1 mA @ 9 V • Small SOT−953 SMT Package • Low Capacitance • These are Pb−Free Devices Benefits • Provides Protection for ESD I |
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