| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Schottky Barrier Diode • Extremely Fast Switching Speed • Extremely Low Forward Voltage 0.385 V (max) @ IF = 10 mA • Low Reverse Current • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage F |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 300 300NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbo |
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ON Semiconductor |
Schottky Barrier Diode http://onsemi.com • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc Low Reverse Current Lead−Free Plating Pb−Free Package is Available 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 MAXIMUM |
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ON Semiconductor |
Schottky Barrier Diode http://onsemi.com • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc Low Reverse Current Lead−Free Plating This is a Pb−Free Device 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 MAXIMUM RAT |
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ON Semiconductor |
Schottky Barrier Diode • Very Low Forward Voltage Drop − 370 mV @ 10 mA • Low Reverse Current − 7.0 mA @ 10 V VR • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C • Very High Switching Speed • Low Capacitan |
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ON Semiconductor |
Schottky Barrier Diode http://onsemi.com 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE • • • • • • • • • • • • • • • • • • • Very Low Forward Voltage Drop − 400 mV @ 10 mA Low Reverse Current − 0.2 mA @ 10 V VR 100 mA of Continuous Forward Current ESD Rating − Human Bo |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 32 320NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol |
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ON Semiconductor |
Schottky Barrier Diode • Very Low Forward Voltage Drop − 350 mV @ 10 mA • Low Reverse Current − 5 mA @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C • These Devices are Pb−Free, Halogen Free/BFR Fr |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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ON Semiconductor |
Schottky Barrier Diode Very Low Forward Voltage Drop − 560 mV @ 10 mA Low Reverse Current − 25 nA @ 50 V VR 70 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 2 pF NSV Prefix for |
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ON Semiconductor |
Schottky Barrier Diode • Very Low Forward Voltage Drop − 350 mV @ 1 mA • Low Reverse Current − 0.2 mA @ 10 V • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C • This is a Halide−Free Device • This is a Pb−F |
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ON Semiconductor |
Schottky Barrier Diode . Symbol VR IF IFSM Value 30 100 1.0 Unit Vdc mA A 2 1 SOD−723 CASE 509AA PLASTIC 1 1 CATHODE 2 ANODE MARKING DIAGRAM 7A MG G 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Therma |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 200 200NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbo |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Naina Semiconductor |
Standard Recovery Diodes Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TA = 25oC, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TC = |
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Naina Semiconductor |
Standard Recovery Diodes Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TA = 25oC, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TC = |
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Naina Semiconductor |
Standard Recovery Diodes Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TA = 25oC, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TC = |
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