| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
NPN-PNP Power Bipolar Transistors • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 3 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Sym |
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ON Semiconductor |
NPN-PNP Power Bipolar Transistors • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 3 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Sym |
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ON Semiconductor |
Silicon Power Transistors • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage |
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ON Semiconductor |
NPN-PNP Silicon Power Bipolar Transistors • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 5 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symm |
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ON Semiconductor |
NPN-PNP Silicon Power Bipolar Transistors • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 5 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symm |
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Inchange Semiconductor |
Silicon NPN Power Transistor VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(on) Base−Emitter On Voltage IC = 5.0 A, VCE = 5.0 V ICBO Collector Cutoff Current VCB= 250V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0. |
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ON Semiconductor |
Power Transistors • Fast Switching Speeds • High Frequency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Configurations • Accurate Reproduction |
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ON Semiconductor |
Silicon Power Transistors • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage |
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