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Alpha & Omega Semiconductors |
30V N-Channel MOSFET cteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 24 53 30 64 Maximum Junction-to-Case Steady-State RqJC 2.6 3 Rev.2.1: January 2024 www.aosmd.com D S Units V |
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Alpha & Omega Semiconductors |
N-Channel MOSFET Maximum Junction-to-Case C Maximum 30 ±20 32 25 127 27 22 34 29 36 25 10 6 3.8 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State |
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ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 |
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Alpha & Omega Semiconductors |
N-Channel MOSFET nd Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 0.6 Max 17 55 0.8 Units ° C/W ° C/ |
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ON Semiconductor |
Silicon Controlled Rectifiers • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 V • These are Pb |
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AMI SEMICONDUCTOR |
(N64S0818HDA / N64S0830HDA) 64Kb Low Power Serial SRAMs • Power Supply Options 1.8V to 3.6V • Very low standby current As low as 200nA • Very low operating current As low as 500uA • Simple memory control Single chip select (CS) Serial input (SI) and serial output (SO) • Flexible operating modes Word read |
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Alpha & Omega Semiconductors |
30V N-Channel MOSFET 2.5 2.3 1.5 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 17 44 Maximum Junction-to-Case Steady-State RqJC 3.4 Max 21 53 4 D S Units V V A |
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Central Semiconductor |
PNP Silicon Power Transistor |
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ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 |
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Central Semiconductor |
SILICON NPN POWER TRANSISTORS =5.0A, IB=2.0A - 5.0 - 5.0 VBE(SAT) IC=2.5A, IB=500mA - 1.5 - 1.5 VBE(SAT) IC=5.0A, IB=2.0A - 2.5 - 2.5 hFE VCE=10V, IC=2.5A 10 75 10 75 hFE VCE=10V, IC=5.0A 3.0 - 3.0 - fT VCE=10V, IC=250mA, f=1.0MHz 5.0 - 5.0 - Cob VCB=10V, IE= |
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Digitron Semiconductors |
ZENER DIODES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Operating Temperature: Stora |
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Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
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Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
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Motorola Semiconductor |
Silicon Controlled Rectifiers ve Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) IT(RMS) IT(AV) ITSM I2t 16 10 160 145 Amps Amps Amps A2s Forward Peak Gate Power Forward Average Gate Power Forward Peak Gate Current Operating Junctio |
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EIC discrete Semiconductors |
(1N4460 - 1N4496) SILICON ZENER DIODES |
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Fairchild Semiconductor |
Amplifier Transistor ise Voltage Level : 2N6428 : 2N6428A Test Condition IC=100µA, IE=0 IC=1mA, IB=0 VCB=30V, IE=0 VCE=30V, IB=0 VBE=5V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IB=10mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=1mA, VCE=5V VCB=10V, IE=0, |
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Alpha & Omega Semiconductors |
N-Channel MOSFET 0 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 3.4 Max 30 64 4 Units ° C/W ° C/W ° C/W Rev 0: Sep 2011 www.aosmd.com P |
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Inchange Semiconductor |
Silicon PNP Power Transistors P Power Transistors Product Specification 2N6489 2N6490 2N6491 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6489 2N6490 IC=-0.2A ;IB=0 2N6491 VCEsat-1 Collector |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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National Semiconductor |
N-Channel Monolithic Dual JFET rce Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common Source Output Conductance Common-Source Output C |
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