| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
1Mb Ultra-Low Power Asynchronous CMOS SRAM • Single Wide Power Supply Range 1.65 to 2.2 Volts • Very low standby current 0.5µA at 1.8V (Typical) • Very low operating current 0.7mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory |
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ON Semiconductor |
1 Mb Ultra-Low Power Serial SRAM |
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ON Semiconductor |
3.3V SiGe 8-Bit Dual Modulus Programmable Divider/Prescaler |
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ON Semiconductor |
Ultra-Low Power Asynchronous CMOS SRAM • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory c |
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ON Semiconductor |
1 Mb Ultra-Low Power Serial SRAM • Power Supply Range: 1.7 to 2.2 V • Very Low Typical Standby Current < 1 mA • Very Low Operating Current < 10 mA • Simple Serial Interface ♦ Single-bit SPI Access ♦ DUAL-bit and QUAD-bit SPI-like Access • Flexible Operating Modes ♦ Word Mode ♦ Page |
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Panasonic Semiconductor |
Minibright LED Series it 10 5 (Q )-( L) LN 0 LN 180 1 01 C 40 (Q 1C )-( (Q L) )-( L) Lighting Color Red Green Amber Orange − Lens Color Clear Clear Clear Clear − 100 IO Typ 1.5 10.0 5.0 8.0 mcd Min 0.65 3.50 1.90 3.00 mcd IF 15 20 20 20 mA Typ 2.2 2.2 2.2 2.1 V VF Max |
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Panasonic Semiconductor |
Minibright LED Series it 10 5 (Q )-( L) LN 0 LN 180 1 01 C 40 (Q 1C )-( (Q L) )-( L) Lighting Color Red Green Amber Orange − Lens Color Clear Clear Clear Clear − 100 IO Typ 1.5 10.0 5.0 8.0 mcd Min 0.65 3.50 1.90 3.00 mcd IF 15 20 20 20 mA Typ 2.2 2.2 2.2 2.1 V VF Max |
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Panasonic Semiconductor |
GaAs IC (with built-in ferroelectric) 2.1±0.1 0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 0.2±0.05 0.12 +0.05 −0.02 4 6 5 1 GN01094B s Measurement Circuit 1000 pF GaAs MMIC 18 nH 100 pF 15 Ω RFIN VAGC 4.7 kΩ 1000 pF |
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Panasonic Semiconductor |
GaAs IC(with built-in ferroelectric) 2.1±0.1 0.1 For low noise amplifier of cellular phone Other communication equipment 0.2±0.05 0.12 +0.05 −0.02 4 6 5 0.425 1 GN01096B s Measurement Circuit 1000 pF GaAs MMIC 1.4 pF 39 nH 100 pF RFOUT 0.5 pF 82 Ω 22 nH 100 pF 6 5 4 3 |
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ON Semiconductor |
1 Mb Ultra-Low Power Serial SRAM |
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NXP Semiconductors |
N-Channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. VDS |
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ON Semiconductor |
Ultra-Low Power Asynchronous CMOS SRAM • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory c |
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ON Semiconductor |
Ultra-Low Power Asynchronous CMOS SRAM • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory c |
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ON Semiconductor |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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NXP Semiconductors |
MOSFET and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at l |
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ON Semiconductor |
RF Transistor • Small ON-resistance [Ron=2Ω (IB=3mA)] • Small output capacitance [Cob=1.2pF (VCB=10V)] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector |
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Panasonic Semiconductor |
Minibright LED Series V λP Typ 700 565 590 nm ∆λ Typ 100 30 30 nm IR IF 10 10 10 mA Max 5 10 10 µA VR 4 4 4 V IO Ta (%) Relative Luminous Intensity 500 300 LN 0 1303 GC(L) LN 012 03C -(L ) LN01403YC-(L) IO (mcd) Luminous Intensity C- 5 01 3 LN LN 01 40 IF ( |
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Panasonic Semiconductor |
Minibright LED Series it 10 5 (Q )-( L) LN 0 LN 180 1 01 C 40 (Q 1C )-( (Q L) )-( L) Lighting Color Red Green Amber Orange − Lens Color Clear Clear Clear Clear − 100 IO Typ 1.5 10.0 5.0 8.0 mcd Min 0.65 3.50 1.90 3.00 mcd IF 15 20 20 20 mA Typ 2.2 2.2 2.2 2.1 V VF Max |
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Panasonic Semiconductor |
GaAs IC with built-in ferroelectric Part B 12 1 GaAs MMICs Pout, ACP Pin 20 15 10 1910MHz 1880MHz 1850MHz 0 –10 Pout –20 10 15 20 GN01081B Pout, IDD Pin 60 50 IDD 40 ACP (dBc) Pout (dBm) Pout (dBm) ACP 1.25MHz 0 –5 –10 ACP 2.25MHz –15 –20 –30 –70 –80 –25 –20 –15 –10 –5 0 |
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Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor q q 3 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2 0.30+0.10 –0.05 1 (0.65) 1.1+0.2 –0.1 q U |
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