| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector-Base Voltage V(BR)CBO Collector-Emitter Voltage V(BR)CEO Emitter-Base Voltage V(BR)EBO Collector Current − Continuous IC Electrostatic Discharge ESD Va |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Di |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Electrostatic |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Electrostatic |
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ON Semiconductor |
PNP General Purpose Amplifier Transistor Surface Mount • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Symbol V(BR)CBO V(BR)CEO V(BR)EB |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Electrostatic Di |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Collector-Base Voltage V(BR)CBO Collector-Emitter Voltage V(BR)CEO Emitter-Base Voltage V(BR)EBO Collector Current − Continuous IC Electrostatic Discharge ESD Va |
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Maple Semiconductor |
Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power |
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Maple Semiconductor |
80V N-Channel MOSFET - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise |
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ON Semiconductor |
Small Signal Plastic Pnp ltage (IC = –100 mAdc, IB = –10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min –45 –60 –7.0 – – 210 – Max – – – –0.1 –100 340 –0.5 Unit Vdc SC –59 SUFFIX CASE 318D MARKING DIAGRAM Vdc Vdc AR M mAdc nAdc – Vdc Preferred devices a |
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Motorola Semiconductor Products |
Small Signal Plastic Pnp –10 Vdc, IB = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = – 2.0 mAdc) Collector –Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min – |
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ON Semiconductor |
PNP Silicon General Purpose High Voltage Transistor • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO IC −300 −30 |
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