| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NXP Semiconductors |
Near field communication (NFC) controller Low power HT80C51 MX CPU core with 72 KBytes ROM, 44 KBytes non-volatile memory for code, 8 KBytes non-volatile memory for data and 4 KBytes RAM Buffered output drivers to connect an NFC antenna with minimum number of external components Integr |
|
|
|
|
National Semiconductor |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications n Ultra low current consumption n 2.7V to 5.5V operation n Selectable synchronous and asynchronous powerdown mode: ICC = 1 µA (typ) n Dual modulus prescaler: 64/65 or 128/129 n Selectable charge pump TRI-STATE ® mode n Selectable charge pump current |
|
|
|
|
ON Semiconductor |
Bias Resistor Transistor |
|
|
|
|
Cypress Semiconductor |
Powerline Communication ■ Integrated Powerline Modem PHY ■ 2400 bps Frequency Shift Keying Modulation ■ Powerline Optimized Network Protocol ■ Integrates Data Link, Transport, and Network Layers ■ Supports Bidirectional Half-Duplex Communication ■ 8-bit CRC Error Detection |
|
|
|
|
Toshiba Semiconductor |
PROGRAMMABLE COMMUNICATION INTERFACE |
|
|
|
|
Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply r DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA |
|
|
|
|
Toshiba Semiconductor |
PROGRAMMABLE COMMUNICATION INTERFACE |
|
|
|
|
National Semiconductor |
PLLatinum 2.7 GHz Low Power Dual Modulus Prescaler for RF Personal Communications low current consumption; typically 7.0 mA at 5V VCC The LMX5080 is available in a 8-pin Small Outline (SOP) surface mount plastic package. Features 2.7V to 5.5V operation Low current consumption: 7 mA (typ) @ 5V −40˚C to +85˚C low noise CMOS output |
|
|
|
|
Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply C characteristics Reverse current Symbol min. Values typ. max. mA 0.3 0.45 18 µA V 0.12 0.2 0.3 Unit IR VR = 5 V VR = 8 V Reverse current IR VF - VR = 8 V, TA = 80 °C Forward voltage I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Dio |
|
|
|
|
Freescale Semiconductor |
G2 Communications Microcontroller User Manual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1-1 Architecture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
|
|
|
|
National Semiconductor |
PLLatinum 2.0 GHz Frequency Synthesizer for RF Personal Communications very low current consumption, typically 3.5 mA at 3V. The charge pump provides 4 mA output current. The LMX2324 is manufactured using National’s ABiC V BiCMOS process and is packaged in a 16-pin TSSOP and a 16-pin Chip Scale Package (CSP). Features |
|
|
|
|
National Semiconductor |
PLLatinum Low Power Frequency Synthesizer for RF Personal Communications n n n n n 2.3V to 5.5V operation Ultra low current consumption 2.5V VCC JEDEC standard compatible Programmable or logical power down mode: — ICC = 1 µA typical at 3V Dual modulus prescaler: — LMX2306 8/9 — LMX2316/26 32/33 Selectable charge pump TRI- |
|
|
|
|
Hitachi Semiconductor |
Serial Communications Adaptor of the SCA, including four types of MPU interfaces, a bus arbiter, timers, and an interrupt controller, provide added functionality in a wide range of applications, such as frame relay exchanges/system multiplexes, private branch exchanges, computer |
|
|
|
|
National Semiconductor |
four-channel commutator • High Analog Voltage Handling • High Commutating Rate • Low Leakage Current (TA = 25° C) (TA = 85°C) ±10V 500 kHz 200pA 50nA • All Channel Blanking input provided • Reset capability provided • Low ON Resistance 200n In addition, the MM454/MM55 |
|
|
|
|
Hitachi Semiconductor |
Dual Universal Serial Communications Controller • Channel data rate: 4M bps maximum • Receiver/Transmitter: Two channels, dual full-duplex syn- synchronous/asynchronous • MUlti-protocol BOP (Bit Oriented Protocol) operation: BCP (Byte Controlled Protocol) COP (Character Oriented Protocol) ASYNC (A |
|
|
|
|
Toshiba Semiconductor |
PROGRAMMABLE COMMUNICATION INTERFACE |
|
|
|
|
National Semiconductor |
PLLatinum? 2.0 GHz Frequency Synthesizer for RF Personal Communications very low curent consumption, typically 3.5mA at 3V. The charge pump provides 4 mA output current. The LMX2323 is manufactured using National’s ABiC V BiCMOS process and is packaged in a 16-pin TSSOP. Features n RF operation up to 2.0 GHz n 2.7V to 5 |
|
|
|
|
National Semiconductor |
(HPC36400E / HPC46400E) High-Performance Communications MicroController have been added to support V 120 the 8-bit mode has been enhanced to support all instructions and the UART has been changed to provide more flexibility and power The HPC46400E is fully upward compatible with the HPC16400 The HPC46400E has 4 functiona |
|
|
|
|
Sierra Semiconductor |
TELECOMMUNICATIONS APPLICATION NOT - Caller I.D. Circuit ervice. allowcsalledpartietsoidentiftyhecall- totheTipandRingincominligneS. ome ingpartyn'sumber. delay(typical5ly00Mseci)sprovided A generaol verviewoi thefunctional betweethneendof theRingSignal andperformanrceequiremeonftCsID Electronciicrcu |
|
|
|
|
National Semiconductor |
LM621 Brushless Motor Commutator Y Y Y Y Y Adjustable dead-time feature eliminates current spiking On-chip clock oscillator for dead-time feature Outputs drive bipolar power devices (up to 35 mA base current) or MOSFET power devices Compatible with three- and four-phase motors Bi |
|