ON Semiconductor MMS fiche technique

No.	Partie #	Fabricant	Description
1	HYMP125U64CP8-Y5	Hynix Semiconductor	240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
2	HYMP125U64CR8-Y5	Hynix Semiconductor	240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
3	MMSZ5242BT1G	ON Semiconductor	Zener Voltage Regulators • 500 mW Rating on FR−4 or FR−5 Board • Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ Thermal Equilibrium* • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications • General Purpose, Medium Curr
4	MMSD103T1G	ON Semiconductor	High Voltage Switching Diode  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol V
5	MMSD4148	ON Semiconductor	Switching Diode • SOD−123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−F
6	HYMP164U64CR6-C4	Hynix Semiconductor	240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
7	HMT125U7BFR8C	Hynix Semiconductor	240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51
8	MMSF3P03HD	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v
9	MMSD4148T3G	ON Semiconductor	Switching Diode       SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb
10	MMSF4N01HD	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v
11	HYMP164U64CR6-Y5	Hynix Semiconductor	240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
12	HYMP125U64CP8-S6	Hynix Semiconductor	240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version • JEDEC standard Double Data Rate2 Synchrnous DRAMs (DDR2 SDRAMs) with 1.8V +/ - 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface 8 Bank architecture Posted CAS Programmable CAS Latency 3 ,4 ,5, 6 OCD (Off-Chip Driver I
13	MMSF7N03HD	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v
14	MMSF7N03Z	ON Semiconductor	Power MOSFET
15	MMSF3P02HD	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v
16	MMSF10N03Z	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. EZFET devices are designed for use in low v
17	MMSF5N03HD	ON Semiconductor	Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v
18	MMSZ12	EIC discrete Semiconductors	(MMSZxx) ZENER DIODES : www.DataSheet4U.com ZENER DIODES SOD-123 2.7 2.6 0.6 0.5 * Total Power Dissipation 500 mW on FR-4 or FR-5 Board * Wide Zener Reverse Voltage Range 2.4 V to 75 V * Package Designed for Optimal Automated Board Assembly * Small Package Size for High
19	HMT112U6AFP8C	Hynix Semiconductor	240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51
20	HMT125U7AFR8C	Hynix Semiconductor	240pin DDR3 SDRAM Unbuffered DIMMs and Ordering Information 1.1.1 Features 1.1.2 Ordering Information 1.2 Speed Grade & Key Parameters 1.3 Address Table 2. Pin Architecture 2.1 Pin Definition 2.2 Input/Output Functional Description 2.3 Pin Assignment 3. Functional Block Diagram 3.1 51