| No. | Partie # | Fabricant | Description | Fiche Technique |
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National Semiconductor |
(MM5555 / MM5556) Chromatic Frequency Generators |
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National Semiconductor |
4-Bit CMOS Micro Controller include single supply operation, a variety of output configuration options, with an instruction set, internal architecture and I/O scheme designed to facilitate keyboard input, display output and BCD data manipulation. The MM57408 and COP244 are 28 p |
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National Semiconductor |
4-Bit Binary Counter Y Wide supply voltage range Y Guaranteed noise margin |
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Samsung Semiconductor |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas • Part Identification - KMM5364003CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5364003CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5364103CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5364103CKG(2048 cycles/32ms Ref, SOJ, Gold) • Fast Page Mode Operation • C |
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Samsung Semiconductor |
DRAM MODULE • Part Identification - KMM53632000BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53632000BKG(4K cycles/64ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and o |
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National Semiconductor |
BCD-to-Decimal Decoder Y Y Y Y Typical propagation delay 15 ns Wide supply range 2V – 6V Low quiescent current 80 mA (74HC) Fanout of 10 LS-TTL loads Connection Diagram Dual-in-line Package Truth Table No Inputs D C B A 0 L L L L L L L L L H L L L H H H H H INVALID H H |
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National Semiconductor |
8-Input NAND Gate |
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Samsung Semiconductor |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas • Part Identification - KMM5361203C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361203C2WG(1024 cycles/16ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS refresh capability • RAS-only refresh capability • TTL compatible inputs and output |
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National Semiconductor |
Quad Analog Switch Y Y Y Y Y Y Typical switch enable time 15 ns Wide analog input voltage range 0 – 12V Low ‘‘on’’ resistance 50X typ Low quiescent current 80 mA maximum (74HC) Matched switch characteristics Individual switch controls Connection Diagram Dual-In-Line |
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Samsung Semiconductor |
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo • Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold) • Fast Page Mode with Extended Data Out • CAS-before-RAS refresh capability • RAS-only and hidden refresh capability • TTL comp |
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National Semiconductor |
(MM54HCT190 / MM54HCT191) Synchronous Binary Up/Down Counters Y Y Y Y Level changes on Enable or Down Up can be made regardless of the level of the clock Low quiescent supply current 80 mA maximum (74HCT Series) Low input current 1 mA maximum TTL compatible inputs Connection Diagram Dual-In-Line Package Tru |
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Samsung Semiconductor |
8MB X 32 DRAM Simm Using 4MB X 16 • Part Identification - KMM5328004CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5328004CSWG(4K cycles/64ms Ref, TSOP, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible in |
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Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 • Part Identification - KMM53216000BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216000BKG(4K cycles/64ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and o |
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Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 • Part Identification - KMM53216004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004CKG(4K cycles/64ms Ref, SOJ, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inpu |
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National Semiconductor |
8-Bit Magnitude Comparator Y TTL input compatible Y Typical propagation delay 20 ns Y Low quiescent current 80 mA maximum (74HCT Series) Y Large output current 4 mA Y Same as HCT521 Logic Diagrams C1995 National Semiconductor Corporation TL F 5371 TL F 5371 – 2 RRD-B30M105 |
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National Semiconductor |
90-Key Keyboard Encoder |
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National Semiconductor |
12-Bit Successive Approximation Register Y Wide supply voltage range 3 0V to15V Y Guaranteed noise margin 1 0V Y High noise immunity Y Low power TTL 0 45VCC typ fan out of 2 compatibility driving 74L Y Provision for register extension or truncation Y Operates in START STOP or cont |
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National Semiconductor |
BCD-to-7 Segment Decoder Y Wide supply voltage range 3 0V to 15V Y Guaranteed noise margin 1 0V Y High noise immunity Y Low power 0 45 VCC (typ ) fan out of 2 TTL compatibility driving 74L Y High current sourcing output (up to 50 mA) Y Ripple blanking for leading o |
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Samsung Semiconductor |
DRAM MODULE • Part Identification - KMM5362203C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5362203C2WG(1024 cycles/16ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • TTL compatible inputs |
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Samsung Semiconductor |
16MBx32 DRAM Simm Using 16MBx4 • Part Identification - KMM53216004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53216004BKG(4K cycles/64ms Ref, SOJ, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inpu |
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