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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Ammo |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 Ordering Information Part Number KSA1015GRTA KSA1015YTA Marking A1015 A1015 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Ben |
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ON Semiconductor |
PNP Epitaxial Silicon Transistor • Color TV Audio Output • Color TV Vertical Deflection Output ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage −160 V VCEO Collector−Emitter Voltage −160 V VEBO Emitter |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Absol |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Driver Stage Amplifier • Complement to KSC2316 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number KSA916YTA Top Mark A916 Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses e |
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Fairchild Semiconductor |
High Speed High Voltage Switching = - 1A IB2 = 0.5A, VBE(off) = 5V L = 180µH, Clamped VCB = - 100V, IE = 0 VCE = - 100V, RBE = 51Ω TC = 125°C VCE = - 100V, VBE(off) = 1.5V VCE = - 100V, VBE(off) = 1.5V TC = 125°C VEB = - 5V, IC= 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A VCE = |
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Samsung semiconductor |
PNP Silicon Transistor |
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Fairchild Semiconductor |
PNP Silicon Transistor =1MHz -0.45 15 50 35 -160 60 320 -1.5 -0.75 V V MHz pF Min. Typ. Max. -1 -1 Units µA µA V hFE Classification Classification hFE R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1013 Typical |
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Fairchild Semiconductor |
PNP Transistor |
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Fairchild Semiconductor |
PNP Transistor n Bandwidth Product Output Capacitance Test Condition VCB = - 120V, IE = 0 VEB = - 3V, IC = 0 VCE = - 5V, IC = - 5mA VCE = - 5V, IC = - 0.3A IC = - 1A, IB = - 0.2A IC = - 1A, IB = - 0.2A VCE = - 5V, IC = - 0.2A VCB = - 10, IE = 0 f = 1MHz 35 60 150 1 |
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Fairchild Semiconductor |
PNP Transistor n Bandwidth Product Output Capacitance Test Condition VCB = - 120V, IE = 0 VEB = - 3V, IC = 0 VCE = - 5V, IC = - 5mA VCE = - 5V, IC = - 0.3A IC = - 1A, IB = - 0.2A IC = - 1A, IB = - 0.2A VCE = - 5V, IC = - 0.2A VCB = - 10, IE = 0 f = 1MHz 35 60 150 1 |
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Fairchild Semiconductor |
Power Amplifier Applications IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A IC = - 2A, IB = - 0.2A VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 0.5A VCB = - 10V, f = 1MHz 70 25 - 0.3 - 0.75 100 40 Min. - 30 -5 -1 -1 240 - 0.8 -1 V V MHz pF Typ. Max. Units V V µA µA hFE Cl |
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Fairchild Semiconductor |
Crt Display/ Video Output Condition IC= -10µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -150V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -10mA IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCE= -30V, IC= -10mA VCB= -30V, f=1MHz VCB= -30V, f=1MHz 150 2.6 1.7 100 Min. -200 -200 -5 -0.1 -0. |
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Fairchild Semiconductor |
Audio Power Amplifier Condition IC=-5mA, IE=0 IC=-10mA, RBE=∞ IE=-5mA, IC=0 VCB=-230V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-7A IC=-8A, IB=-0.8A VCE=-5V, IC=-7A VCE=-5V, IC=-1A VCB=-10V, f=1MHz 55 35 60 -0.4 -1.0 30 360 -3.0 -1.5 V V MHz pF Min. -230 -230 -5 -5 |
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Fairchild Semiconductor |
Low Frequency Power Amplifier Power Regulator 0µA, IE = 0 IC = - 10mA, IB = 0 IE = - 1mA, IC = 0 VCB = - 20V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A IC = - 2A, IB = - 0.2A VCE = - 2V, IC = - 0.5A VCE= - 2V, IC = - 0.5A VCB = - 10V, IE = 0, f = 1MHz 70 25 - 0.3 |
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Fairchild Semiconductor |
High Voltage Amplifier Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -100V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -200mA, IB= -20mA IC= -200mA, IB= -20mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz 70 |
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Fairchild Semiconductor |
Low Frequency Amplifier Test Condition IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Rs=10kΩ -0.50 50 4 |
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Fairchild Semiconductor |
Low Frequency Amplifier 0.1 -0.1 600 -0.3 -0.65 V V MHz pF Units µA µA hFE Classification Classification hFE O 90 ~ 180 Marking Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 D1 O hFE grade ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA812 Typical Characteristi |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor , IC= -1mA VCB= -30V, IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA µA nA hFE2 Classification Classi |
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Fairchild Semiconductor |
PNP Transistor |
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