No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
N-Channel Ignition IGBT • Space Saving D−Pak Package Availability • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications • Automotive Ignition Coil Driver Circuits • Coil−On Plug Applicatio |
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Fairchild Semiconductor |
N-Channel Ignition IGBT • Industry Standard D2-Pak package • SCIS Energy = 500mJ at TJ = 25oC • Logic Level Gate Drive • Qualified to AEC Q101 • RoHS Compliant Package JEDEC TO-263AB D²-Pak G E Symbol JEDEC TO-220AB JEDEC TO-262AA |
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Fairchild Semiconductor |
N-Channel Ignition IGBT • Industry Standard D2-Pak package • SCIS Energy = 500mJ at TJ = 25oC • Logic Level Gate Drive • Qualified to AEC Q101 • RoHS Compliant Package JEDEC TO-263AB D²-Pak G E Symbol JEDEC TO-220AB JEDEC TO-262AA |
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Fairchild Semiconductor |
30A/ 600V Stealth Dual Diode • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . |
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Fairchild Semiconductor |
30A 600V Stealth Diode • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . |
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Fairchild Semiconductor |
Diode • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 25ns • • • • Operating Temperature. . . . . . . . . . . . . . . . . . 150oC Reverse Voltage . . . . . . . . . |
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Fairchild Semiconductor |
N-Channel IGBT SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive Ignition Coil Driver Circuits Coil - On Plug Applications General Description The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outs |
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Fairchild Semiconductor |
EcoSPARK N-Channel Ignition IGBT SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive Ignition Coil Driver Circuits Coil - On Plug Applications General Description The ISL9V5045S3ST is next generation ignit |
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Fairchild Semiconductor |
EcoSPARK N-Channel Ignition IGBT SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive Ignition Coil Driver Circuits Coil - On Plug Applications General Description The ISL9V5045S3ST_F085 is next generation |
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ON Semiconductor |
N-Channel IGBT • Industry Standard D2−Pak package • SCIS Energy = 500 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil−On |
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Fairchild Semiconductor |
N-Channel Ignition IGBT ! SCIS Energy = 250mJ at TJ = 25oC ! Logic Level Gate Drive ! Qualified to AEC Q101 ! RoHS Compliant Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications General Description The ISL9V2540S3ST is a next generation ign |
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Fairchild Semiconductor |
N-Channel Ignition IGBT • Space saving D - Pak package available • SCIS Energy = 200mJ at TJ = 25oC • Logic Level Gate Drive Package JEDEC TO-252AA JEDEC TO-263AB |
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Fairchild Semiconductor |
N-Channel Ignition IGBT • Space saving D-Pak package availability • SCIS Energy = 300mJ at TJ = 25oC • Logic Leve |
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Fairchild Semiconductor |
N-Channel Ignition IGBT • Industry Standard D2-Pak package • SCIS Energy = 500mJ at TJ = 25oC • Logic Level Gate Drive • Qualified to AEC Q101 • RoHS Compliant Package JEDEC TO-263AB D²-Pak G E Symbol JEDEC TO-220AB JEDEC TO-262AA |
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Fairchild Semiconductor |
30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET • rDS(ON) = 0.006Ω Typical, VGS = 10V • Qg Total 85nC Typical, VGS = 10V • Qgd 16nC Typical • CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol D G GATE SOURCE S Ordering Information PART NUMBER ISL9N2357D3ST PACK |
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Fairchild Semiconductor |
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
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Fairchild Semiconductor |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
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Fairchild Semiconductor |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
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Fairchild Semiconductor |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0. |
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Fairchild Semiconductor |
N-Channel IGBT SCIS Energy = 500mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive Ignition Coil Driver Circuits Coil - On Plug Applications General Description The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outs |
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