| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
High Side Gate Driver • Qualified to AEC Q100 • Floating channel designed for bootstrap operation fully oper- ational up to 300V. • Tolerance to negative transient voltage on VS pin • dv/dt immune. • Gate drive supply range from 4.5V to 20V • Under-voltage lockout • CMOS |
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Fairchild Semiconductor |
Half Bridge Gate Driver • Qualified to AEC Q100 • Floating channel designed for bootstrap operation fully oper- ational to + 600V • Tolerance to negative transient voltage on VS pin • VS-pin dv/dt immune. • Gate drive supply range from 5.5V to 20V • Under-voltage lockout • |
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Fairchild Semiconductor |
High Side Gate Driver • Qualified to AEC Q100 • Floating channel designed for bootstrap operation up fully operational to + 600V • Tolerance to negative transient voltage on VS pin • dV/dt immune. • Gate drive supply range from 10V to 20V • Under-voltage lockout • CMOS Sc |
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Fairchild Semiconductor |
High Side Gate Driver with Reset • Qualified to AEC Q100 • Floating channel designed for bootstrap operation up fully operational to + 600V • Tolerance to negative transient voltage on VS pin • dv/dt immune. • Gate drive supply range from 10V to 20V • Under-voltage lockout • CMOS Sc |
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ON Semiconductor |
High Side Gate Driver • Qualified to AEC Q100 • Floating channel designed for bootstrap operation fully oper- ational up to 300V. • Tolerance to negative transient voltage on VS pin • dv/dt immune. • Gate drive supply range from 4.5V to 20V • Under-voltage lockout • CMOS |
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ON Semiconductor |
Half Bridge Gate Driver • Automotive Qualified to AEC−Q100 and PPAP Capable • Floating Channel for Bootstrap Operation to +600 V • Tolerance to Negative Transient Voltage on VS Pin • VS−pin dv/dt Immune • Gate Drive Supply Range from 5.5 V to 20 V • Under−Voltage Lockout (U |
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ON Semiconductor |
High Side Gate Driver • Qualified to AEC Q100 • Floating channel designed for bootstrap operation up fully operational to + 600V • Tolerance to negative transient voltage on VS pin • dv/dt immune. • Gate drive supply range from 10V to 20V • Under-voltage lockout • CMOS Sc |
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ON Semiconductor |
Power Switch • Advanced Burst Mode Operation at No−Load Condition • 700 V High−Voltage JFET Startup Circuit • Internal Avalanche−Rugged 700 V SENSEFET • Built−in 5 ms Soft−Start • Peak−Current−Mode Control • Cycle−by−Cycle Current Limiting • Leading−Edge Blanking |
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