| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwi |
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Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator re |
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Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator re |
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Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB E CG Symbol G |
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Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive Low Saturation Voltage Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications General Description The FGB3245G2_F085 |
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ON Semiconductor |
N-Channel IGBT |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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ON Semiconductor |
N-Channel IGBT • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications SYMBOL COLLECT |
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ON Semiconductor |
N-Channel IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package JEDEC TO-263AB D2-Pak GATE EMITTER COLLECTOR (FLANGE) Absolute Maximum Ratings TA = 25°C unle |
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ON Semiconductor |
N-Channel IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) |
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ON Semiconductor |
IGBT • Industry Standard D2PAK Package • SCIS Energy = 330 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications MAXIMUM RATING |
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Fairchild Semiconductor |
N-Channel Ignition IGBT Industry Standard D2-Pak package SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER COLL |
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ON Semiconductor |
N-Channel IGBT • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Pl |
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ON Semiconductor |
N-Channel IGBT Applications SCIS Energy = 335mJ at TJ = 25oC Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB EC G Symbo |
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Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 335mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB EC G Symbol G |
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Freescale Semiconductor |
HCS08 Microcontrollers ...........................................................................................................................................17 1.2.1 Standard Features of the HCS08 Family ................................................................ |
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Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator re |
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Thinki Semiconductor |
35.0 Ampere Heatsink Block Automotive Rectifier Diodes Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator re |
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Panasonic Semiconductor |
Aluminum Electrolytic Capacitors ith maximum specified ripple current (see page 4) *2000 hours for 20mm length sizes **Use of temperature ripple current multipliers may limit life to the hours specified for the maximum operating temperature. Part Number System E C A B Series Code C |
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