ON Semiconductor FSF fiche technique

No.	Partie #	Fabricant	Description
1	FSFR2100XS	Fairchild Semiconductor	Power Switch ge and Currents Reverse Voltage 3.0 V Average Forward dc 'f Current/Segment or Decimal Point 25 mA Derate from 25° С Ambient Temperature 0.3mA/°C Peak Forward Current •pk Segment or Decimal Point (100 ms pulse width) 1000 pps, TA • 25°C 200 mA Vr FN
2	FSFR1800US	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
3	FSFR	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas
4	FSFR1700USL	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
5	FSFM260N	Fairchild Semiconductor	(FSFM260N / FSFM300N) 30W FPS ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies (
6	FSFA2100	Fairchild Semiconductor	Fairchild Power Switch (FPS) for Half-Bridge PWM Converters  Optimized for Complementary Driven Half-Bridge Soft-Switching Converters  Can be Applied to Various Topologies: Asymmetric PWM Half-Bridge Converters, Asymmetric PWM Flyback Converters, Asymmetric PWM Forward Converters, Active Clamp Flyback Conve
7	FSFR2100XS	ON Semiconductor	Power Switch • Variable Frequency Control with 50% Duty Cycle for Half−Bridge Resonant Converter Topology • High Efficiency through Zero Voltage Switching (ZVS) • Internal UniFETt with Fast−Recovery Body Diode • Fixed Dead Time (350 ns) Optimized for MOSFETs • Up
8	FSFR1800XS	ON Semiconductor	Power Switch • Variable Frequency Control with 50% Duty Cycle for Half−Bridge Resonant Converter Topology • High Efficiency through Zero Voltage Switching (ZVS) • Internal UniFETt with Fast−Recovery Body Diode • Fixed Dead Time (350 ns) Optimized for MOSFETs • Up
9	FSFR1800L	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
10	FSFR2000	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
11	FSFR1800USL	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
12	FSFR2100USL	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
13	FSFR2100US	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for M
14	FSFM300N	Fairchild Semiconductor	(FSFM260N / FSFM300N) 30W FPS ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies (
15	FSFM261N	Fairchild Semiconductor	Green-Mode Fairchild Power Switch ! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under Description The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Suppli
16	FSFR2100	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas
17	FSFR1800	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal SuperFET™s with Fast-Recovery Type Body Diode (trr=120ns) for FSFR2100 and UniFETs with Fas
18	FSFR1600	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
19	FSFR2100U	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)
20	FSFR1800	Fairchild Semiconductor	Power Switch Variable Frequency Control with 50% Duty Cycle for Half-bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™s with Fast-Recovery Type Body Diode (trr<160ns). Fixed Dead Time (350ns)