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Fairchild Semiconductor |
600V N-Channel MOSFET • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Param |
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Fairchild Semiconductor |
FQP3N80C • 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconduc |
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Fairchild Semiconductor |
FQP7N65C • • • • • • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S A |
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Fairchild Semiconductor |
FQP10N20C • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET 9 * 0,&782 0,'))82 9 &)) &' '3 3 :±&) * ( ( ( * = ( = *$ ? ?$8 8 |
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Fairchild Semiconductor |
150V N-Channel MOSFET = 6 = !$ ; , 2.&*:4 2.)++:4 ; )*+ &' )/ ' ))& ±&* , ( ( ( , |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
250V P-Channel MOSFET • • • • • • -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! G ▶ ▲ ● DS TO-220 FQP Series ! D Absolute Maximum Rati |
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Thinki Semiconductor |
N-Channel Power MOSFET • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● { |
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Fairchild Semiconductor |
FQP16N25 • 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS |
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Fairchild Semiconductor |
200V N-Channel MOSFET • 19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS E |
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Fairchild Semiconductor |
250V Channel MOSFET ./++95 : )*+ &' )& /4 4 ±&+ , ( ( ( , = ( = ,$ ? ?$9 9 9 ; , : (! < (! -!(! < |
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Fairchild Semiconductor |
N-Channel MOSFET • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enha |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A • Low Gate Charge (Typ. 26.5 nC) • Low Crss (Typ. 45.5 pF) • 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairch |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 9.4A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-22 |
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Fairchild Semiconductor |
150V N-Channel MOSFET 6 , = 6 = !$ ; , 2.&':4 2.*++:4 ; *'+ &' ( *3 * *+& / ±&' |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
FQP6N60 • • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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