| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Smart Power Module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low Thermal Resistance Using Ceramic Substrate • Low-Loss, Short-Circuit Rated IGBTs • Built-In Bootstrap Diodes and Dedicated Vs Pin |
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Fairchild Semiconductor |
1200 V Motion SPM 2 Series • UL Certified No. E209204 (UL1557) • 1200 V - 35 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes |
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Fairchild Semiconductor |
12-Element Bar Display ELEMENT I (1.270) I I I ___ ...JI 12 .100TYP I (2.540) • .05OTYP (1.270) + Electrical and Radiant Characteristics Symbol Characteristic VF Forward Voltage VR Reverse Voltage 10 Axial luminous Intensity TA = 25°C Apk Peak Waveleng |
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Fairchild Semiconductor |
Smart Power Module • 600V-8A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-groun |
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Fairchild Semiconductor |
Smart Power Module • 600V-10A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-grou |
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Fairchild Semiconductor |
1200 V Motion SPM 2 Series • UL Certified No. E209204 (UL1557) • 1200 V - 25 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes |
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ON Semiconductor |
1200V Motion SPM under−voltage lockouts, over−current shutdown, temperature sensing, and fault reporting. The built−in, high−speed HVIC requires only a single supply voltage and translates the incoming logic−level gate inputs to high−voltage, high−current drive sign |
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Fairchild Semiconductor |
Smart Power Module • 600V-5A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-groun |
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Fairchild Semiconductor |
600 V Motion SPM 2 Series • UL Certified No. E209204 (UL1557) • 600 V - 50 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes a |
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Fairchild Semiconductor |
Motion SPM 2 module • UL Certified No. E209204 (UL1557) • 1200 V - 10 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes |
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Fairchild Semiconductor |
Smart Power Module • 600V-15A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-grou |
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Fairchild Semiconductor |
Motion SPM 55 Series • UL Certified No. E209204 (UL1557) • 600 V - 10 A 3-Phase IGBT Inverter Including Control IC for Gate Drive and Protections • Low-Loss, Short-Circuit Rated IGBTs • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Acti |
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Fairchild Semiconductor |
Motion SPM 55 Series • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter Including Control IC for Gate Drive and Protections • Low-Loss, Short-Circuit Rated IGBTs • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Acti |
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Fairchild Semiconductor |
Motion SPM 55 Series • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter Including Control IC for Gate Drive and Protections • Low-Loss, Short-Circuit Rated IGBTs • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing • Acti |
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Fairchild Semiconductor |
Motion SPM 2 module • UL Certified No. E209204 (UL1557) • 600 V - 30 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes a |
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Fairchild Semiconductor |
Motion SPM 55 module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter Including Control IC for Gate Drive and Protections • Low-Loss, Short-Circuit Rated IGBTs • Built-In Bootstrap Diodes in HVIC • Separate Open-Emitter Pins from Low-Side IGBTs fo |
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Fairchild Semiconductor |
600V Motion SPM 2 module • UL Certified No. E209204 (UL1557) • 600 V - 75 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes a |
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ON Semiconductor |
Motion SPM • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low Thermal Resistance Using Ceramic Substrate • Low-Loss, Short-Circuit Rated IGBTs • Built-In Bootstrap Diodes and Dedicated Vs Pin |
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