| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
60V N-Channel MOSFET • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient sup |
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ON Semiconductor |
N-Channel Power MOSFET Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Driv |
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Fairchild Semiconductor |
MOSFET Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Applications Industrial Motor Drive Industrial Power Supply Industrial Automation Battery Operated tools |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS( |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A Typ Qg(10) = 44nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Automotive Engine Contro |
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ON Semiconductor |
N-Channel Power MOSFET Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A Typ Qg(TOT) = 91nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Applications Automotive Engine Control Powertrai |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET 80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppresso |
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Fairchild Semiconductor |
N-Channel MOSFET • 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (23nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and cur |
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Fairchild Semiconductor |
N-Channel MOSFET 60 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V, RDS(ON) = 0.0120 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppres |
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Fairchild Semiconductor |
N-Channel MOSFET Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A Typ Qg(TOT) = 91nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Automotive Engine Co |
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Fairchild Semiconductor |
N-Channel MOSFET Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A Typ Qg(TOT) = 91nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Automotive Engine Co |
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Fairchild Semiconductor |
N-Channel MOSFET Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 187nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications 12V Automotive Load |
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ON Semiconductor |
N-Channel MOSFET • Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free and is RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Bat |
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ON Semiconductor |
N-Channel Power MOSFET • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability • Qualified to AEC Q101 • RoHS Compliant D |
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ON Semiconductor |
N-Channel MOSFET • RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • PDP TV • Lighting • Uninterruptible Power Supply • A |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • D |
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Fairchild Semiconductor |
N-Channel MOSFET • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient sup |
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Fairchild Semiconductor |
N-Channel MOSFET • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient sup |
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Fairchild Semiconductor |
N-Channel MOSFET 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Improved replacement for NDP6030L/NDB6030L. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. __________________________________________________ |
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