| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) |
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Fairchild Semiconductor |
(FCM7010 / FCM7015) Digital MOS |
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Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) |
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Fairchild Semiconductor |
(FCM7010 / FCM7015) Digital MOS |
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Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) |
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Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) |
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Hynix Semiconductor |
Super Low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 48-ball FBGA Product No. Voltage (V) Speed (ns) 70 Operation Current/Icc(mA) 1.0 HY62S |
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Fairchild Semiconductor |
3-Phase Sinusoidal Brushless DC Motor Controller www.DataSheet4U.net Description FCM8201 is a three-phase sinusoidal brushless DC (BLDC) motor controller. It comes with the advanced Hall sensor design. Using the Hall sensor signals, the control system is able to e |
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Fairchild Semiconductor |
3-Phase Sinusoidal Brushless DC Motor Controller www.DataSheet4U.net Description FCM8202 is a three-phase sinusoidal brushless (BLDC) motor controller with the advanced Hall sensor design. Using the Hall sensor signals, the control system is able to execute the PWM co |
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Fairchild Semiconductor |
MCU Embedded and Configurable 3-Phase PMSM / BLDC Motor Controller Advanced Motor Controller (AMC) Configurable Processing Core - Sensorless Field-Oriented Control (FOC) with Speed Integral Method - Sensorless FOC with Sliding Mode - Hall Interface Space Vector Modulation (SVM) Sine-Wave & Square-Wave Generato |
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Fairchild Semiconductor |
N-Channel SuperFET II MOSFET • 650 V @ TJ = 150°C • RDS(on) = 170 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Server and Telecom Power Supplies • Solar I |
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Fairchild Semiconductor |
N-Channel SuperFET II MOSFET |
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Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.2V(min) data retention • Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) |
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Samsung semiconductor |
FCM - 1024X10bits 2 bank Line memory. - Independent Read/Write Operation. - Programmable Read Start Address and Write Start Address. - HD Pre-counter for Horizontal blanking. - Serial-Interface Circuit - CMOS Double metal technology - 5V Power supply OR |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ RDS(on) = 100 mW • Ultra Low Gate Charge (Typ. Qg = 49 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 406 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Se |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150 °C • Typ RDS(on) = 152 mW • Ultra Low Gate Charge (Typ. Qg = 33 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / S |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150 °C • Typ RDS(on) = 210 mW • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / S |
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ON Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 87 mW • Ultra Low Gate Charge (Typ. Qg = 56 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 500 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Se |
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